溅射功率对Fe_(81)Ga_(19)薄膜结构和磁性的影响  

Effects of Sputtering Power on Structure and Magnetic Properties of Fe_(81)Ga_(19) Films

作　　者：马亚茹[1] 曹梦雄[1] 王兴宇[1] 马春林[1] 周卫平[1] 谭伟石[1,2] 

机构地区：[1]南京理工大学理学院应用物理系软化学与功能材料教育部重点实验室,江苏南京210094 [2]湖南城市学院信息与电子工程学院,湖南益阳413002

出　　处：《热加工工艺》2017年第22期149-151,154,共4页Hot Working Technology

基　　金：国家自然科学基金资助项目(11079022)

摘　　要：采用射频磁控溅射技术在Sr Ti O_3(100)衬底上制备Fe_(81)Ga_(19)薄膜。利用XRD、AFM和VSM表征了Fe_(81)Ga_(19)薄膜的生长取向、内应力、表面形貌和磁性,研究了不同溅射功率(60~100 W)对Fe_(81)Ga_(19)薄膜结构和磁性能的影响。结果表明,所有薄膜主要以A_2相和L1_2相存在。随着溅射功率的增大,A_2相衍射峰的强度缓慢降低,内应力显著增加,表面粗糙度降低,薄膜的剩余磁化强度和饱和磁化强度明显减小,而矫顽力保持不变,都为50 Oe。Fe81Ga19 thin films were deposited on SrTiO3（100） substrate by RF magnetron sputtering technique. In order to investigate the effects of sputtering power （60-100 W） on the structure and magnetic properties of FeslGa19 thin films, the growth orientation, internal stress, surface morphology and magnetic properties of Fe81Ga19 films were characterized by X-ray diffraction （XRD）, atomic force microscopy（AFM） and vibrating sample magnetometer （VSM）. The results show that A2 and L12 phases are main phases in all of these films. With the increase of sputtering power, the intensity of the diffraction peak of the A2 phase decreases slowly, the internal stress gradually decreases, the surface roughness increases, and the residual magnetization and saturation magnetization of the deposited film decrease obviously, but the coercive force retains the same value, which is 50Oe.

关 键 词：Fe81Ga19薄膜 RF磁控溅射 溅射功率 微观结构 磁性 

分 类 号：TB34[一般工业技术—材料科学与工程]