石墨烯晶体管的栅长对跨导的影响  

The Effect of the Gate Length on the Transconductance of Graphene Transistors

作　　者：张庆伟[1] 李平[1] 廖永波[1] 王刚[1] 曾荣周[1] 王恒[1] 翟亚红[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《微电子学与计算机》2017年第12期25-27,33,共4页Microelectronics & Computer

基　　金：国家自然科学基金项目(61404021);电子薄膜与集成器件重点实验室开放基金(KFJJ201608)

摘　　要：对于传统的硅MOS场效应晶体管,器件跨导的大小正比于沟道的宽长比.本文在石墨烯晶体管中发现了相反的现象.制备了源漏之间距离相同,且沟道宽度相同的石墨烯晶体管,实验结果为沟道较长的晶体管跨导较大.究其原因,石墨烯晶体管中栅电极覆盖的沟道面积较大时,被感应的载流子数量较多,所以跨导较大.此实验结果和分析对石墨烯晶体管的进一步理解和应用有明显的意义.To traditional Si MOS field effect transistors, the transconductrance is proportional to the width length ratio of the channel. In this paper, the opposite phenomenon has been observed in graphene transistors. The graphene transistors with the same distance between source and drain electrodes and the same channel width have been fabricated. The transconductance with longer channel is larger. The reason is following. The channel area that covered by gate electrodes can affect the carriers in channel. The former is larger, the inductive latter is more. So, the transconductanee is larger. The results and analysis are helpful to the comprehension and application of graphene transistors.

关 键 词：石墨烯晶体管 跨导 宽长比 硅MOS晶体管 

分 类 号：TN312[电子电信—物理电子学]