可双向导通的凹栅隧穿晶体管  

Bidirectional current path recessed gate tunnel field-effect transistor

作　　者：陈树鹏 王树龙[1] 刘红侠[1] 李伟[1] 汪星 王倩琼 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2017年第6期70-74,168,共6页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61376099;61434007;61504100)

摘　　要：传统的隧穿晶体管由于自身结构的不对称性使其只有单向电流通路,造成了电路设计的诸多不便.以改善这一缺陷为目的,设计了一种新型的具有双向电流通路的高性能凹栅隧穿晶体管,并通过silvaco TCAD软件仿真的方法,对该新型晶体管的性能进行了验证.分析了器件的掺杂、尺寸等工艺参数对其能带及性能的影响机制.结果表明,该器件在0.5V驱动电压下获得了5×106的开关比,最小亚阈值摆幅仅为12mV/dec.总的来说,该器件在低驱动电压下具有较大的开关比以及非常陡峭的亚阈值曲线斜率,适用于超低功耗设计应用.The structure asymmetry of the conventional tunneling transistor makes it only able to have a unidirectional current path,which will cause the inconvenience of circuit design.In order to overcome this shortcoming,a novel recessed gate tunnel field-effect transistor with high performance is proposed in this paper and verified by silvaco TCAD software. The effects of process parameters such as doping concentration and geometry dimension on the energy band and properties of the device are analyzed.Simulation results show that the Ion/Ioffratio can reach 5×106 at a 0.5 Vdriving voltage and the minimum subthreshold swing of 12 mV/dec at the 0.1 Vgate to source voltage.In general,this device has a large switching ratio and a very steep subthreshold slope under a low drive voltage.It is expected that this novel device can be one of the promising alternatives for ultra-low power applications.

关 键 词：带带隧穿 隧穿晶体管 凹栅 双向电流通路 

分 类 号：TN386.1[电子电信—物理电子学]