氧化铝添加量对多孔碳化硅支撑体性能的影响  

Effect of Alumina Doping on Properties of Macroporous Silicon Carbide Supports

作　　者：于吉 郁苏俊 漆虹[1] 

机构地区：[1]材料化学工程国家重点实验室,南京工业大学膜科学技术研究所,南京210009

出　　处：《硅酸盐学报》2017年第12期1810-1817,共8页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(21276123,21490581);江苏省“六大人才高峰”项目资助

摘　　要：以平均粒径为27.6μm的α-Si C为骨料、亚微米碳化硅和α-Al2O3为助烧剂,采用干压成型法在空气氛围中烧成制备多孔碳化硅支撑体,研究了氧化铝含量对多孔碳化硅支撑体结构及性能的影响。结果表明:当氧化铝添加量为10%(质量分数)、烧成温度为1 450℃时,支撑体的孔径、孔隙率、抗弯强度和纯水通量分别为0.3μm、31.8%、39.1 MPa和786 L·m^(–2)·h^(–1)·bar^(–1)。经过80℃,10%的Na OH溶液中腐蚀4 h后,多孔碳化硅支撑体的抗弯强度仍高于18 MPa。Macroporous silicon carbide（α-SiC） supports prepared by a dry-pressing method were sintered in air by using α-Si C powder（the average particle size of 27.6 μm） and submicron-sized silicon carbide and alumina as sintering agents. Effect of alumina doping on the structure and properties of macroporous silicon carbide support was investigated. The effect of the doping amount of alumina on the pore size, porosity, bending strength, and pure water flux of the SiC supports was also investigated. SiC support can be obtained at 1 450 when a℃ lumina powder of 10%（in mass fraction） is added. The pore size, porosity, three-point bending strength and pure water flux of this support are 0.3 μm, 31.8%, 39.1 MPa, and 786 L·m^–2·h^–1·bar^–1, respectively. The three-point bending strength of the support is 18 MPa after corroded in 10% NaOH（80 ℃） for 4 h.

关 键 词：多孔陶瓷支撑体 碳化硅 纯水通量 耐腐蚀性能 

分 类 号：TQ174[化学工程—陶瓷工业] TQ050.4[化学工程—硅酸盐工业]