仿真环境下探究氢化非晶硅薄膜晶体管原理的教学实践  

Exploration of Teaching Practice for the α-Si: H TFT Principles With Using Simulation

作　　者：陈文彬[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《电气电子教学学报》2017年第5期138-141,共4页Journal of Electrical and Electronic Education

基　　金：电子科技大学本科教学改革研究项目(Y02012023701215)

摘　　要：氢化非晶硅薄膜晶体管(α-Si:H TFT)是平板显示领域的主流技术,其原理是传统教学模式中的难点,相反却为探究式教学呈现出了广阔空间。将α-Si:H TFT的工作状态分为四个区域,详细分析了这四个区域的电流-电压特性,结合RPI SPICE参数规划了教学核心内容并示例性给出了探究点,通过参数调整-仿真-参数提取-再仿真的闭环过程,可以深入理解α-Si:H TFT的物理机制。教学实践表明增高了学生参与度,教学效果良好。α-Si：H TFT technology is the dominant technology in the flat panel display. The principles of α-Si：H TFT are the difficulty in the traditional teaching mode, instead this gives rise to a great scope of application to the inquiring teaching mode. The current-voltage characteristic of α-Si：H TFT are deeply analyzed and the 4 working regimes are combined with the RPI SPICE model. Typical inquiring points are discussed, which include leakage drain current, threshold voltage, field effect mobility. Closed loop inquiring process is set up based upon parameter adjustment-simulation-parameter extraction-resimulation, which can make students deeply understand the physical mechanism of α-Si ： H TFT. The teaching method and teaching contents for inquiring α-Si ： H TFT principles using simulation are presented. Teaching practice shows that students＇ participation is higher and the teaching effect is good.

关 键 词：探究 SPICE α-Si:H 薄膜晶体管 

分 类 号：G642[文化科学—高等教育学] G4[文化科学—教育学]