UHF RFID低压高效电荷泵的分析与设计  

Analysis and design of low voltage and high efficiency charge pump in UHF RFID

作　　者：向姝蓉 冯全源[1] 向乾尹[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都611756

出　　处：《电子元件与材料》2018年第1期84-87,共4页Electronic Components And Materials

基　　金：国家自然科学基金重点项目资助(61531016);四川省科技支撑计划重点项目资助(2016GZ0059;2017GZ0110)

摘　　要：为使电可擦除可编程只读存储器(EEPROM)更好地适用于无源超高频射频识别(UHF RFID)芯片,提出了一种低压高效电荷泵电路的设计方案。利用附加晶体管切换电路中MOS管的衬底电压,增加自举晶体管对栅极充电,该设计方案可消除体效应对阈值电压的影响,有效抑制反向漏电流。综合分析电路的影响因素后,折中设计给出合适的设计参数。采用SMIC 0.18μm EEPROM工艺、利用Hspice仿真验证,在输入电压1.5 V时,13级电荷泵输出电压可高达18 V,保证了UHF RFID芯片良好性能的实现。In order to make the EEPROM memory better suitable for passive UHF RFID chips, this paper presenteda low voltage and high efficiency charge pump circuit design scheme. This design scheme could eliminate the influenceof the body effect on threshold voltage, and effectively suppressed the reverse leakage current by using additionaltransistors to switch the circuit MOS transistor substrate voltage, increased the bootstrap transistor to the gate charge.After analyzing the influencing factors of the circuit, the compromise design gave the appropriate design parameters.Using SMIC 0.18 μm EEPROM process and Hspice simulation verification, when the input voltage is 1.5 V, 13 classcharge pump output voltage is up to 18 V. UHF RFID chip is ensured to have good performance.

关 键 词：电荷泵 体效应 漏电流 低压 UHFRFID EEPROM 

分 类 号：TN43[电子电信—微电子学与固体电子学]