弛豫铁电单晶的顶部籽晶法生长  

Relaxor-based ferroelectric single crystals grown by top-seeded solution growth method

作　　者：何超 杨晓明 王祖建[1] 龙西法[1] 

机构地区：[1]中国科学院福建物质结构研究所光电材料化学与物理重点实验室,福州350002

出　　处：《中国科学：技术科学》2017年第11期1126-1138,共13页Scientia Sinica(Technologica)

基　　金：国家自然科学基金(批准号:11404331;91422303);中国科学院海西研究院"春苗"人才专项计划(编号:CMZX-2016-006)资助项目

摘　　要：相比较于传统的Pb(Zr_(1-x)Ti_x)O_3(PZT)多晶压电陶瓷,弛豫铁电单晶具有超高的机电耦合系数和压电系数.例如,典型的Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3(PZN-PT)和Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3(PMN-PT)弛豫铁电单晶,其机电耦合系数k_(33)>0.9,压电系数d_(33)>2000 pC/N,使其有潜力应用于下一代压电器件,如传感器、声呐、执行器等.但是弛豫铁电单晶应用的关键在于单晶的制备问题.弛豫铁电单晶的制备技术包括高温溶液法(助溶剂法)、垂直坩埚下降法和顶部籽晶法.顶部籽晶法在制备弛豫铁电单晶时具有很多优势.因此,本文将阐述顶部籽晶法制备弛豫铁电单晶的最新进展.Compared to conventional Pb（Zr1–xTix）O3（PZT） polycrystalline ceramics, relaxor-based（relaxor-PT） ferroelectric single crystals have excellent performance with ultrahigh electromechanical coupling factor and piezoelectric coefficient. For example, the typical relaxor-PT ferroelectric single crystals, such as Pb（Zn1/3Nb2/3）O3-PbTiO3（PZN-PT） and Pb（Mg1/3Nb2/3）O3-PbTiO3（PMN-PT）, have electromechanical coupling factors k33〉 0.9 and piezoelectric coefficients d33〉 2000 pC/N, making them as candidate materials for the next generation of piezoelectric devices, such as piezoelectric transducers, sensors and actuators. But the difficulties for the relaxor-PT single crystals application is the preparation technique. The crystal growth technique, including high-temperature solution（flux）growth, the vertical Bridgman growth and top-seeded solution growth（TSSG） method were used for preparation of relaxor-PT single crystals. TSSG offers some advantages for growth of relaxor-PT single crystals. Therefore, in this article, recent major advances in the development of relaxor-PT single crystals are reviewed in terms of crystal growth using top-seeded solution growth method.

关 键 词：压电性 弛豫铁电 单晶 单晶生长 顶部籽晶法 

分 类 号：O782[理学—晶体学]