纳米真空沟道三极管  

A Nanoschale Vacuum Channel Triode

作　　者：廖复疆[1] LIAO Fu-jiang(Beijing Vacuum Electronics Research Institute, Beijing 100015, China)

机构地区：[1]北京真空电子技术研究所大功率微波电真空器件技术国防科技重点实验室,北京100015

出　　处：《真空电子技术》2017年第6期1-6,24,共7页Vacuum Electronics

基　　金：大功率微波电真空器件技术国防科技重点实验室军用电子预研基金项目(614280702011701)

摘　　要：本文描述了一种新型纳米真空沟道三极管,在纳米尺度下使电子在真空中实现弹道传输,大大优于半导体载流子在介质中的传输,从而使器件的信息处理速度得到极大地提高。纳米真空沟道三极管有三种途径获得,一是采用场致发射电子源,构建纳米真空沟道三极管;二是采用肖特基二极管中的二维电子气作为电子源,构成纳米真空沟道三极管;三是采用激光照射产生的光电子作为电子源,构成纳米真空沟道三极管。无论采用哪一种电子源都是可以用来制造新型纳米真空沟道三极管的电子源,都值得我们进一步研究。A new nanoschale vacuum channel triode is described in this paper.The electrons will travel with ballistic transport under this nanoschale channel region.Its speed is higher than the carriers in the semiconductors.Therefore,the information treatment speed is increased with this new device.The nanoschale vacuum channel triode can be obtained with 3 methods：One uses the field emission electron sources to construct the nanoschale vacuum channel triode;The second uses 2 dimension electron gas（2 DEG）in the semiconductor Schottky diode as the electron source to construct the nanoschale vacuum channel triode;the third uses laser light to produce opto-electron sources to construct the nanoschale vacuum channel triode;The new nanoschale vacuum channel triodes made with these methods are all important to the next generation electronics development and should be investigated with them.

关 键 词：毫米波 太赫兹波 真空电子 光子带隙 TWT 纳米真空三极管 

分 类 号：TN11[电子电信—物理电子学]