小面积高性能无源电感设计  

Design of small size and high performance passive inductor

作　　者：杨虎城 缪旻[1] 李振松[1] 

机构地区：[1]北京信息科技大学信息微系统研究所,北京100101

出　　处：《北京信息科技大学学报（自然科学版）》2017年第6期34-38,43,共6页Journal of Beijing Information Science and Technology University

基　　金：国家自然科学基金资助项目(61674016);北京市属高等学校高层次人才引进与培养计划项目(长城学者培养计划)(CIT&TCD20150320)

摘　　要：基于硅基板设计了一种4.5匝的二维平面螺旋电感结构。针对该结构所占基板面积较大的问题,分别提出了基于硅通孔(Through Silicon Via,TSV)的双层互连2.5D螺旋电感结构和基于TSV阵列的三维螺旋电感结构。在相同电感值的情况下,对3种结构所占面积和性能进行了比较。仿真结果表明:二维平面螺旋电感结构虽然可以获得较好性能,但所占面积过大;双层互连2.5D螺旋电感结构性能相对欠佳,但可以一定程度地减小面积;基于TSV阵列的三维螺旋电感结构可以大大减小所占面积,而且通过结构优化可以获得一种适用于射频电路集成的硅基射频高Q电感。A 2 D planar spiral inductor structure of 4. 5 turns is firstly designed based on the silicon substrate. In order to reduce the occupied area of the substrate,two other spiral inductor structures are presented. One is a 2. 5 D spiral inductor structure based on the TSV( Through Silicon Via) and the other is 3 D interconnection spiral inductor structure based on a TSV array. With the same inductance value,the occupied area and performance are compared. The simulation results show that the 2 D planar spiral inductor can obtain better performance,but the occupied area is too large. The performance of the 2. 5 D spiral inductor structure is relatively poor,but it can reduce the area to a certain extent. The 3 D spiral inductor based on TSV array can greatly reduce the occupied area and can be optimized to obtain a high Q inductor,which can be applied to RF circuit integration.

关 键 词：硅基板 射频 螺旋电感 集成无源元件 

分 类 号：TN492[电子电信—微电子学与固体电子学]