Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs  

作　　者：彭超 恩云飞 雷志锋 陈义强 刘远 李斌 

机构地区：[1]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,China Electronic Product Reliability and Environmental Testing Research Institute [2]School of Electronic and Information Engineering, South China University of Technology

出　　处：《Chinese Physics Letters》2017年第11期106-109,共4页中国物理快报（英文版）

基　　金：Supported by the National Postdoctoral Program for Innovative Talents under Grant No BX201600037;the Science and Technology Research Project of Guangdong Province under Grant Nos 20158090901048 and 2015B090912002;the Distinguished Young Scientist Program of Guangdong Province under Grant No 2015A030306002

摘　　要：Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.

关 键 词：SOI MOSFET Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs 

分 类 号：TN386[电子电信—物理电子学]