一种改进EE_HEMT电容方程的GaN HEMT器件模型  

An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE_HEMT Model

作　　者：薛伟韬 刘伊民 王储君[1] 钱峰[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2017年第5期303-306,322,共5页Research & Progress of SSE

摘　　要：在传统的EE_HEMT模型基础上,通过修改电容方程,得到一个新的可适用于GaN HEMT器件的模型。新电容模型主要通过tanh函数拟合和的变化趋势。在ICCAP软件中,完成新模型参数的提取;在ADS软件中,完成S参数仿真和负载牵引仿真,并与实测结果进行了对比,最大功率点性能拟合效果得到改善。文中描述的新模型,可在一定程度上提高GaN HEMT模型仿真精度。This paper provided a new model for GaN HEMT using improved capacitance-e-quation based on the traditional EE_HEMT model, in which the tanh function was used to de-scribe the variation tendency of the parameters and. The parameters for the new model were ex-tracted using ICCAP. The S-parameters and load-pull simulations were conducted in ADS, and the simulated results were compared with the measured ones. The results show that the fitting accuracy for Pout is improved. The new model presented in this paper is supposed to increase the simulation accuracy of GaN HEMT model.

关 键 词：GAN高电子迁移率晶体管 EE_HEMT模型 电容方程 负载牵引仿真 

分 类 号：TN325.3[电子电信—物理电子学]