氨气流量对富硅SiNx薄膜结构及其光学特性的影响  

Effect of NH_3 Flow Rate on the Structures and Optical Properties of Silicon Rich SiN_x Thin Films

作　　者：谷鑫 周炳卿[1] 翁秀章 部芯芯 丁德松 

机构地区：[1]内蒙古师范大学物理与电子信息学院,功能材料物理与化学自治区重点实验室,呼和浩特010022

出　　处：《人工晶体学报》2017年第12期2369-2373,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51262022)

摘　　要：采用等离子体增强化学气相沉积技术,以NH_3、SiH_4_和N_2为反应气体制备富硅-氮化硅薄膜。在优化了其它沉积参数条件下,研究氨气流量对富硅-氮化硅薄膜的结构和光学性质的影响。利用傅立叶变换红外光谱、紫外可见光谱和X射线衍射谱分析了薄膜的键合情况、带隙结构。结果表明,随着NH_3流量的增大,薄膜中的Si-N键和N-H键增强,Si-H键减小并向高波数方向移动,薄膜逐渐由非晶SiN_x相向小晶粒Si_3N_4相转变。同时随着NH_3流量的增大,薄膜的光学带隙逐渐展宽,微观结构的有序度降低。XRD图谱分析表明薄膜内的平均晶粒尺寸也随着氨气流量的增加而在逐渐增大。结合以上结果分析,适当增加NH_3流量有助于薄膜由非晶SiN_x向包含小晶粒的Si_3N_4转变。With NH3, Sill4 and N2 as reaction gas, silicon-rich nitride thin films were produced by plasma enhanced chemical vapor deposition method. In the case of optimizing other depositional parameters, the effects of NH3 flow rate were studied on the structures and on optical properties of silicon- rich SiNx thin films. The bonding situation and band gap structures of the film samples were analyzed by Fourier transform infrared absorption, ultraviolet-visible absorption spectrum and XRD. Its research result shows that with the increase of NH3 flow rate, the Si-N bond and N-H bond in the films are strengthened, but the Si-H bond is descended and moves to high wave-number. Meanwhile, the film transformation occurs from amorphous SiNx phase to small crystal Si3N4 phase. Besides, with the increase of NH3 flow rate, the optical band gap of the film is widened gradually and the order degree of the microscopic structures is decreased. In addition, the analysis of XRD pattern shows that the size of the average crystal grain in the films increases gradually with the increase of NH3 flow rate. Based on the above analysis, the conclusion comes that an appropriate increase of NH3 flow rate will contribute to the transformations of films from amorphous SiNx phase to small crystal Si3N4 phase.

关 键 词：等离子体增强化学气相沉积 富硅-氮化硅 红外光谱 微观结构 

分 类 号：TQ174.75[化学工程—陶瓷工业]