Si基PIN光电探测器电场隔离结构对暗电流的影响  

Study on Reducing Dark Current by Isolating Ring Structure in Si-PIN Photodiodes

作　　者：丰亚洁 何晓颖 刘巧莉 王华强 李冲 胡宗海 郭霞 

机构地区：[1]北京工业大学信息学部,北京100124 [2]北京邮电大学电子工程学院信息光子学与光通信国家重点实验室,北京100876

出　　处：《半导体光电》2017年第6期802-805,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61335004;61675046;61505003);国家"973"计划项目(2016YFB0400603);国家"863"计划项目(2015AA017101)

摘　　要：对Si基PIN光电探测器的电场隔离结构进行了研究,讨论了电场隔离结构的作用以及其与暗电流的关系,并进行了仿真模拟与测试分析。电场隔离结构主要将有源区和边缘隔离从而降低暗电流,结合仿真模拟结果和实验测试结果,分析得到电场隔离结构主要降低与周长有关的暗电流,对于小尺寸器件作用更明显。In this paper,the isolation ring structure of Si-based PIN photodetector was studied by discussing the relationship between the isolation ring and dark curent.Simulations and test analysis were carried out.The isolation ring reduces the dark current by isolating the active region from the edge.Combining the simulation results with the experimental results,it shows that the isolation ring mainly reduces the dark current related with the circumference,and the effect is more obvious on small-size devices.

关 键 词：Si基光电探测器 电场隔离结构 暗电流 

分 类 号：TN36[电子电信—物理电子学]