一种带瞬态响应增强的无电容型LDO  

A Capacitor-Less LDO with Transient-Response Enhancement

作　　者：廖鹏飞 金光[2] 李向超[2] 邓军[1] 张颜林[1] 胡珂流 刘伦才[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]郑州铁路职业技术学院,郑州450052

出　　处：《微电子学》2017年第6期743-746,共4页Microelectronics

基　　金："十三五"装备预先研究项目(31513030102-2)

摘　　要：在传统无电容型LDO的基础上,设计了一种带瞬态增强的无电容型LDO。采用频率补偿方案,有效减小所需的片上补偿电容,节约了芯片面积。采用了过冲/下冲检测电路,用于检测负载瞬间变化时输出电压的变化,通过调节功率管栅极电压,提升了LDO的瞬态响应速度。采用0.13μm标准CMOS工艺,对设计的瞬态增强无电容型LDO进行仿真验证。结果表明,片上补偿电容为2pF时,系统静态电流为30μA,当负载在1μs内从1mA变化到50mA时,输出电压过冲为88mV,下冲为50mV,与不带过冲/下冲检测电路的LDO相比,分别提高了56%和54%。The traditional capacitor-less LDOs were analyzed and a capacitor-less LDO with transient enhancement was proposed.Based on the proposed frequency strategy,the required on-chip compensation capacitor was reduced,and the area of the chip was minimized.An overshot/undershot detector was added in the LDO,and it could detect the change of output voltage when the load current changed transiently.The gate voltage of power MOSFET could be adjusted to improve the transient response speed of the LDO.The proposed circuit was simulated in a 0.13μm standard CMOS process.The results showed that the circuit＇s quiescent current was 30μA when the on-chip compensation capacitor was 2 pF.When the load current changed from 1 mA to 50 mA at 1μs,the maximum overshot voltage was 88 mV,and the maximum undershot voltage was 50 mV.Compared with that of the LDOs without transient enhancement,it was improved by 56% and 54% respectively.

关 键 词：频率补偿 过冲电压 下冲电压 CMOS工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]