一种超低温漂低功耗全CMOS基准电压源  

An Ultra Low Temperature Coefficient and Low Power CMOS-Only Voltage Reference

作　　者：周茜 邓进丽 岳宏卫[1] 朱智勇[1] 龚全熙 孙晓菲[1] 

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004

出　　处：《微电子学》2017年第6期769-773,共5页Microelectronics

基　　金：国家自然科学基金资助项目(11264009;61465004);广西区教育厅高校科研资助项目(YB2014135);桂林电子科技大学研究生教育创新计划资助项目(YJCXS201514;2016YJCX92)

摘　　要：提出了一种超低温漂、低功耗亚阈值全CMOS基准电压源。利用工作在亚阈值区的3.3V MOS管与1.8V MOS管的栅源电压差,产生具有负温度系数的ΔVTH和具有正温度系数的VT,经过相互调节,得到与温度无关的基准电压。采用了共源共栅电流镜,以降低电源抑制比(PSRR)和电压调整率。基于SMIC 0.18μm CMOS工艺对电路进行了仿真。仿真结果表明,在-22℃-142℃温度范围内,温度系数为2.8×10^(-6)/℃;在1.33.3 V电源电压范围内,电压调整率为0.48%;频率为100Hz时,PSRR为-62dB;功耗仅为191nW,芯片面积为0.005mm2。A CMOS-only voltage reference based on subthreshold with ultra low temperature coefficient and low power was presented.Some 1.8 Vtransistors and 3.3 Vtransistors were utilized to generateΔVTH and VT with opposite temperature coefficients,which were used to produce the reference voltage that was independent with temperature.Some cascode current mirrors were used to reduce the power supply rejection ratio（PSRR）and the line regulation of the circuit.The proposed circuit was designed in SMIC 0.18-μm CMOS process.The simulated results demonstrated that the temperature coefficient of the voltage was 2.8×10^-6//℃in a temperature range from -22℃ to 142℃,the line regulation was 0.48% in a supply voltage range of 1.3 Vto 3.3 V,and the PSRR was -62 dB at 100 Hz.The power dissipation was 191 nW,and the chip area was 0.005 mm^2.

关 键 词：基准电压源 超低温漂 低功耗 亚阈值 共源共栅电流镜 

分 类 号：TN432[电子电信—微电子学与固体电子学]