考虑温度因素的3D芯片TSV容错结构设计  

Design of TSV Fault-Tolerant Structure for 3D ICs with Good Heat Dissipation Ability

作　　者：张玲 梅军进 王伟征[2] 

机构地区：[1]湖北理工学院计算机学院,湖北黄石435003 [2]长沙理工大学计算机与通信工程学院,长沙410004

出　　处：《微电子学》2017年第6期797-801,805,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61472123,61303042);湖北省自然科学基金资助项目(2014CFC1091);湖北理工学院创新人才项目(13xjz05c);湖北理工学院优秀青年科技创新团队项目(13xtz10);湖北教育厅科研项目基金资助项目(B2014026)

摘　　要：相比于2D芯片,3D芯片具有更高的功率密度和更低的热导率。针对散热问题,多层3D芯片一般采用具有较高热导率的铜填充硅通孔(TSV)。为提高3D芯片的成品率,在温度条件限制下,对3D芯片进行TSV的容错结构设计非常重要。分析了带有TSV的3D芯片温度模型,提出了3D芯片温度模型的TSV修复方法。根据温度要求设计总的TSV数,将这些TSV分为若干个组,每组由m个信号TSV和n个冗余TSV组成,实现了组内和组间信号的TSV修复。实验结果表明,该TSV容错结构不仅有较高修复效率,而且具有较好散热效果。Compared with conventional 2D integrated circuits（2D ICs）,the three-dimensional integrated circuits（3D ICs）have higher power density and lower thermal conductivity.So,the heat dissipation is one of its severe problems.The through silicon vias（TSVs）of 3D ICs are filled with copper that has high thermal conductivity,so it has become the main heat dissipation channels of 3D ICs reasonably.To enhance the yield of 3D ICs,the thermal model of 3D ICs was analyzed,and a new TSV fault tolerate method under thermal constraints was given.The number of TSVs was counted according to the thermal constraints,then these TSVs were divided into several groups,each with m signal TSVs and n repair TSVs,which could achieve faulty tolerating in a group or among groups.The experimental results had proved the effective of the proposed TSV repair solution.

关 键 词：堆叠3D芯片 TSV 容错结构 

分 类 号：TP302[自动化与计算机技术—计算机系统结构] TN305.94[自动化与计算机技术—计算机科学与技术]