具有新型缓冲层的IGBT特性研究  

Study on Characteristics of an IGBT with a New Buffer Layer

作　　者：黄仁发 胡冬青 吴郁 贾云鹏 邹世凯 安鹏振 彭领 

机构地区：[1]北京工业大学信息学部,北京100124

出　　处：《微电子学》2017年第6期851-855,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61176071)

摘　　要：为了降低低压场终止型IGBT的工艺难度并改善其关断特性,对注氢场终止型IGBT(PFS-IGBT)的缓冲层进行了研究,引入了传统场终止型IGBT(FS-IGBT)和线性缓变掺杂场终止型IGBT(LFS-IGBT)来与PFS-IGBT作对比。PFS-IGBT的缓冲层通过多次注氢形成,从背面到内部的掺杂浓度依次降低,具有多个浓度峰值,厚度为2030μm。FS-IGBT的缓冲层掺杂浓度较高,厚度为5μm。LFS-IGBT的缓冲层从背面到内部的掺杂浓度呈线性降低,其厚度为2030μm。采用Sentaurus TCAD对三种具有不同缓冲层结构的IGBT(600V/40A)的特性进行了分析。结果表明,PFS-IGBT通过控制注氢次数、剂量和能量可以获得最优的掺杂分布,器件性能与LFSIGBT相当,比FS-IGBT拥有更平缓的电流关断波形和更强的短路坚固性。In order to reduce the difficulty of ultrathin wafer process and improve the switching behavior of low voltage rated field stop IGBT（FS-IGBT）,the buffer layer of proton implanted IGBT（PFS-IGBT）was proposed and studied emphatically.Another two kinds of layers were introduced to compare the characteristics.The buffer layer of PFS-IGBT had a thickness of 20 to 30 μm,formed by multiple injections of proton.It had a plurality of concentration peaks that decreased successively from the back to the inside of the chip.FS-IGBT had a buffer layer with a thickness less than 5μm and a relatively high doping concentration.Linear-doping field stop IGBT（LFSIGBT）had a 20-30μm buffer layer with a linear concentration variation from the back to the inside of the chip.Based on 600 V/40 Atrench IGBTs,characteristics of the IGBTs were analyzed.The results showed that PFS-IGBT could achieve an optimal doping file through adjusting the dose,energy and implantation number.It had more smoothly switched current waveforms and stronger short circuit robustness compared with the FS-IGBT.

关 键 词：绝缘栅双极型晶体管 注氢 场终止 开关特性 短路坚固性 

分 类 号：TN322.8[电子电信—物理电子学]