伯克利短沟道绝缘栅场效应晶体管模型的研究进展  

Research Progress of the Berkeley Short-Channel Insulated Gate Field Effect Transistor Model

作　　者：刘芳 陈燕宁 李建强 付振 袁远东 张海峰 唐晓柯 

机构地区：[1]北京智芯微电子科技有限公司国家电网公司重点实验室电力芯片设计分析实验室,北京100192 [2]北京智芯微电子科技有限公司北京市高可靠性集成电路设计工程技术研究中心,北京100192

出　　处：《半导体技术》2018年第1期15-23,共9页Semiconductor Technology

摘　　要：随着金属氧化物半导体（MOS）集成电路工艺的飞速发展,体硅金属氧化物半导体场效应晶体管（MOSFET）模型经历了从物理到经验,最后到半经验物理的转变。介绍了以阈值电压和反转电荷为建模基础的伯克利短沟道绝缘栅场效应晶体管模型（BSIM）,以及该模型中阈值电压、饱和电流和电容的基本建模理论。回顾了近年来体硅MOSFET BSIM的研究进展,着重从各种模型的优缺点、建模机理和适用范围方面分析了4种最有代表性的BSIM,即BSIM3v3,BSIM4,BSIM5和BSIM6。从模型的发展历史可以看出模型是随着MOSFET尺寸的缩小而不断完善和发展的。最后,对体硅MOSFET的模型发展趋势进行了展望。With the rapid development of the metal oxide semiconductor（ MOS） integrated circuit technology,the bulk silicon metal oxide semiconductor field effect transistor（ MOSFET） model has been transformed from physics model to empirical model,and finally to semi-empirical physical model. The Berkeley short-channel insulated gate field effect transistor（ IGFET） model（ BSIM） based on the threshold voltage and inversion charge and the basic modeling theory of the threshold voltage,saturation current and capacitance are introduced. The research progress of the bulk silicon MOSFET BSIM in recent years is reviewed. The four most representative BSIMs as BSIM3v3,BSIM4,BSIM5 andBSIM6 are emphatically analyzed,from the aspects of the advantages and disadvantages,modeling mechanisms and applicable scopes of each model. From the development history of the model,it can be seen that the model is constantly improved and developed with the size reduction of the MOSFET. Finally,the development trend of the bulk silicon MOSFET model is prospected.

关 键 词：伯克利短沟道绝缘栅场效应晶体管模型(BSIM) 阈值电压 饱和电流 电荷密度 夹断电势 电容模型 

分 类 号：TN386[电子电信—物理电子学] TN432