应变调制型磁性隧道结器件建模及其转换特性研究  

Macro-model of the Strain-modulated Magnetic Tunneling Junction and Its Switching Characteristics

作　　者：徐立[1] 蔡理[1] 崔焕卿[1] 王森[1] 杨晓阔[1] 冯朝文[1] 

机构地区：[1]空军工程大学理学院,西安710051

出　　处：《固体电子学研究与进展》2017年第6期395-400,423,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61302022;61401498)

摘　　要：基于反映磁性隧道结自由层的磁化强度转换特性的Landau-Lifshitz-Gilbert方程,并参考基尔霍夫电流定律及电容元件伏安特性,建立了应变调制型磁性隧道结器件的HSpice电路仿真模型。分析了器件在不同幅值的输入电压下的转换特性。仿真结果表明,当输入电压小于5.84mV时,产生的应力各向异性能不足以克服磁致伸缩层的能量势垒,不能驱动磁化状态转变,器件状态不改变;反之,若输入电压大于临界电压,则能够驱动磁化状态转变。随着输入电压的增大,器件转换到亚稳态的速度也逐渐加快。通过定量分析80mV输入电压下MTJ阻值的变化特性,得到输入电压脉宽为0.35ns时,器件的最高转换频率为1.3GHz,单次转换能耗为56.6aJ。研究结果对今后应变调制型磁性隧道结器件在集成电路中的设计与应用具有重要意义。An HSpice circuit simulation model of strain-modulated magnetic tunneling junction device was established based on the Landau-Lifshitz-Gilbert equation which reflected the switching characteristics of magnetization of the magnetostrictive layer and Kirchhoff′s law and took the volt-ampere characteristic of capacitor as a reference.The switching characteristics of the device under different amplitude of input voltage were analyzed.Simulation results show,when the input voltage is less than 5.84 mV,the stress anisotropy can′t overcome the energy barrier of the magnetostrictive layer,thus the magnetization can′t rotate and the state of the device doesn′t change,whereas,if the input voltage is more than the critical voltage,it can drive the magnetization transitions.And as the input voltage increases,the speed of the device transiting to metastable state is also accelerating.By analyzing the switching characteristics of the resistance of MTJ under the 80 mV input voltage,it is obtained the fastest state transition frequency is 1.3 GHz and the energy consumption of single transition is 56.6 aJ when the input pulse width is 0.35 ns.The study has a great significance for the design and application of the strainmodulated magnetic tunneling junction in the integrated circuit.

关 键 词：应变调制 磁性隧道结 HSpice模型 转换特性 

分 类 号：O484.2[理学—固体物理] TN4[理学—物理]