基于加速寿命试验的SLD可靠性预计模型研究  

Research on reliability prediction model for SLD based on accelerated lifetime test

作　　者：杨云[1] 任艳[1] 于迪[1] 周军连[1] 戴泽林 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610

出　　处：《电子元件与材料》2018年第2期79-84,共6页Electronic Components And Materials

摘　　要：超辐射发光二极管(SLD)已广泛应用于航空、航天等多个领域,但其预计模型的缺失使得SLD的可靠性分析工作缺乏有效指导。本文基于SLD主要失效模式、失效机理以及典型诱发应力,构建SLD可靠性预计模型,开展加速寿命试验,利用性能退化可靠性评估技术、图估计、最优线性无偏估计等方法对试验数据进行分析处理,确定管芯预计模型参数,应用国内外已有耦合、热阻及制冷器可靠性预计技术,确定管芯耦合及组件预计模型系数的表征,从而完成SLD可靠性预计模型的建立,为SLD工程应用过程中的可靠性分析工作提供技术参考。Superluminescent diode （SLD） is widely used in aviation, aerospace and other fields. Unfortunately, due to the absence of the prediction model for SLD, few effective guidance for reliability analysis is available. In this paper, the prediction model for SLD was established based on the main failure modes, mechanisms and typical induced stress of SLD. To quantitatively determine the reliability prediction model coefficients of SLD chip, the accelerated lifetime test was carried out, and the methods of reliability estimation based on performance degradation, figure estimation, optimal linear unbiased estimation and least square method were employed for data processing. Moreover, the coupling and internal components model coefficients were characterized on the basis of existing reliability prediction technology of coupling, thermistor and refrigerator. The result provides valuable technical information for reliability analysis of the engineering applications of SLD.

关 键 词：光学器件 超辐射发光二极管 可靠性 预计模型 加速寿命试验 性能退化 

分 类 号：TN386[电子电信—物理电子学]