太赫兹器件测试用高重复频率高压脉冲电源  被引量:3

Development of high frequency pulsed power supply for THz device test

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作  者:蔡政平[1] 李伟松[1] 

机构地区:[1]中国科学院电子学研究所高功率微波源与技术重点实验室,北京100170

出  处:《强激光与粒子束》2018年第2期56-61,共6页High Power Laser and Particle Beams

基  金:国家自然科学基金项目(11275004)

摘  要:为了开展太赫兹器件试验研究,设计了高重复频率脉冲电源系统。电源输出脉冲电压30kV,脉冲电流200mA,最大重复频率3kHz,脉冲宽度10~100μs,采用本地PLC加远程计算机控制模式来实现电源的本控及遥控。对系统的核心部件:充电电源和脉冲开关的拓扑结构进行了研究,并开展了仿真和试验。结果表明:采用LC串联谐振恒流充电技术以提高充电电源工作效率以及在负载打火情况下的可靠性;基于MOSFET并进行优化设计的串联脉冲开关可以获得快速的脉冲前后沿。电源系统的输出指标满足负载工作要求,在高重复频率、打火条件下能够稳定工作。The THz device is a new type of microwave device which operates in the 0.1-10 THz frequency band,and it has important application value in the field of communication,imaging,detection and other military applications.Compared with the traditional vacuum microwave devices,the THz device has the characteristics of light load and high duty cycle.A high frequency pulsed power supply system has been developed for the experimental research on THz devices.The output voltage is 30 kV,the pulse current is 200 mA,the maximum frequency is 3 kHz and the pulse width is 10-100μs.The main circuit adopts LC series resonant constant current charging technology to improve the reliability in the case of fire load.At the same time,a series pulse switch based on MOSFETs is developed to obtain fast pulse rise and fall time.A PLC and a computer have been used to realize the local and remote control.Relevant simulation and test show that the system output meets the load requirements,and the system can work stably in high frequency,load arc conditions.

关 键 词:串联谐振 MOSFET 高功率脉冲 高重复频率 

分 类 号:TL507[核科学技术—核技术及应用]

 

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