基于X射线反射研究溅射工艺对CrAlN/TiAlN周期膜界面结构的影响  

Effects of Sputtering Process on Interfacial Structure of CrAlN/TiAlN Nano-scale Multilayer by X-ray Reflectometry

作　　者：杜晓明[1] 郑凯峰[1] 王燕[2] 李新喜[2] 张罡[1] 黄朝强[2] 

机构地区：[1]沈阳理工大学材料科学与工程学院,沈阳110159 [2]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《中国表面工程》2018年第1期67-73,共7页China Surface Engineering

基　　金：辽宁省教育厅科研基金(LG201620);中国工程物理研究院中子物理学重点实验室开放基金(2014BB05)~~

摘　　要：为研究X射线反射技术在纳米多层膜界面微结构表征中的应用,采用反应磁控溅射技术在单晶硅基片上制备CrAlN/TiAlN纳米周期膜,利用X射线反射技术系统研究溅射工艺参数对CrAlN/TiAlN纳米周期膜界面微结构的影响规律。结果表明:增加铝靶功率可提高膜层的溅射速率和降低膜层的界面粗糙度,然而较高的铝靶功率会使膜层界面出现严重的弥散;较大和较小的负偏压都不利于形成完整的周期膜调制结构和光滑的界面;提高Ti/Cr靶电流可有效改善周期膜的调制界面结构,但太大的靶电流会导致膜层间扩散加重,形成弥散界面。N2流量与Ar流量对膜层界面粗糙度具有相反的影响作用。试验得到的优化工艺参数为:铝靶功率80W,溅射负偏压-200 V,Ti/Cr靶电流0.2A,N2流量30cm^3/min,Ar流量10cm^3/min。In order to study the application of X-ray reflectometry in the characterization of interface microstructures of nano- scale multilayer, CrAlN/TiAlN nano-scale multilayers were fabricated by RF-reactive magnetron sputtering. X-ray reflectometry method was used to investigate the effects of deposition parameters on interfacial structure of CrAlN/TiAlN nano-scale multilayer. The results show that the increase of the power of the aluminum target can improve the sputtering rate and reduce the interface roughness of the multilayers. However, the high power of the aluminum target causes serious dispersion of the interface. Larger and smaller negative bias is detrimental to the formation of the complete multilayers with good modulation structures and smooth interfaces. Optimizing the target current of Ti/Cr can effectively improve the modulation structure of the multilayers. While the higher target current will lead to diffusion between the films and form a diffusion interface. N2 flow rate and Ar flow rate have opposite effects on the interface roughness. According to the experimental results, the optimized magnetron sputtering process parameters are obtained as： aluminum target power of 80W, sputtering negative bias of-200 V, Ti/Cr target current of 0.2 A, N2 flow rate of 30 cm^3/min and Ar flow rate of 10 cm^3/min.

关 键 词：磁控溅射 纳米周期膜 CrAlN/TiAlN X射线反射 界面微结构 

分 类 号：TG174.444[金属学及工艺—金属表面处理]