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机构地区:[1]天津大学化工学院,天津300350
出 处:《天津大学学报(自然科学与工程技术版)》2018年第3期278-283,共6页Journal of Tianjin University:Science and Technology
基 金:天津市自然科学基金资助项目(13JCZDJC27200)~~
摘 要:基于异型热管传热机理,设计出一套适用于硅烷法生产电子级高纯多晶硅的反应器,利用Fluent软件对反应器内流场进行了研究.结果表明:反应器内温度场比较均匀,异型热管的加入改善了温度分布,各截面温度随进料气进口速度增加而降低,进口速度由10,m/s提高到50,m/s,反应器内温度降低了4.64%;各截面温度随硅棒增粗而逐渐升高,硅棒从60,mm增粗至140,mm,反应器内温度升高了9.44%,;反应器内各截面硅烷浓度大致保持均匀,各截面硅烷浓度随进料气进口速度增加,随硅棒增粗而降低;硅棒表面沉积速率随进料气进口速度增加而提高,随硅棒增粗而降低.Based on the heat transfer mechanism of the shaped heat pipe,the reactor for the production of electronic grade high purity polysilicon was designed.The flow field in the new reactor was studied by Fluent software.The results show that the temperature field in the reactor is relatively uniform,and the addition of the special-shaped heat pipes improves the temperature distribution of the new reactor.The cross-section temperature of the reactor decreases with the increase of feed gas inlet velocity and when the inlet velocity increases from 10,m/s to 50,m/s,the crosssection temperature is reduced by 4.64%,.The cross-section temperature increases gradually with the silicon rod thickening,and then the silicon rod increases from 60,mm to 140,mm,the cross-section temperature of the reactor increases by 9.44%,.The silane concentration of each cross-section in the reactor is uniform,which increases with the feed gas inlet velocity and decreases with the thickening of the silicon rods.The deposition rate of silicon rods increases with the increase of feed gas inlet velocity,and decreases with the thickening of silicon rods.
分 类 号:TK175[动力工程及工程热物理—热能工程]
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