高效率n型硅离子注入双面太阳电池  

High Efficiency Ion Implanted n-Type Silicon Bifacial Solar Cells

作　　者：李晓苇[1] 史金超[1,2] 张伟 沈艳娇 李锋 

机构地区：[1]河北大学物理科学与技术学院,河北保定071000 [2]保定天威英利新能源有限公司光伏材料与技术国家重点实验室,河北保定071051

出　　处：《半导体技术》2018年第3期211-215,共5页Semiconductor Technology

基　　金：国家国际科技合作专项资助项目(2015DFE62900)

摘　　要：为进一步提升n型硅双面太阳电池的转化效率,采用了磷离子注入技术制备n型硅双面太阳电池的背场。基于离子注入技术准直性和均匀性好的特点,掺杂后硅片的表面复合电流密度降低到了1.4×10^-13A/cm2,隐性开路电压可达670 mV,且分布区间更紧凑。在电阻率为13Ω·cm的n型硅片基底上,采用磷离子注入技术工业化生产的n型硅双面太阳电池的正面平均转化效率达到了20.64%,背面平均转化效率达到了19.52%。内量子效率的分析结果显示,离子注入太阳电池效率的增益主要来自长波段光谱响应的提升。In order to improve the conversion efficiency of n-type silicon bifacial solar cells,the back surface field of the n-type silicon bifacial solar cell was fabricated by P ion implantation technology.Based on the better collimation and uniformity of the ion implantation technology,the recombination current density of the doped silicon surface was lowered to 1. 4 × 10-13 A/cm2 and implied open circuit voltage was raised to 670 mV. The distribution of cells parameters was more compacted. Average conversion efficiency of 20. 64% on front side and 19. 52% on rear side were achieved in mass production using P ion implantation technology on n-type silicon wafers with the resistivity of 1-3 Ω · cm. The internal quantum efficiency test results show that the efficiency gain of ion implantation solar cells are mainly from the increasement of spectra respond at long wavelength.

关 键 词：双面太阳电池 n型Si 转化效率 背场 离子注入 

分 类 号：TN305.3[电子电信—物理电子学]