150 keV电子辐照下SiO_2玻璃的性能及其缺陷演化规律  

The Properties and Evolutionary Law of Defects of Silica Glass under 150 keV Electrons Irradiation

作　　者：徐赛男 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2017年第5期41-44,共4页Natural Science Journal of Harbin Normal University

摘　　要：研究150 ke V电子辐照下SiO_2玻璃的性能及其缺陷演化规律.光学和电学性能分析结果表明,随着辐照注量的增大SiO_2玻璃的光谱透过率和平均电阻逐渐下降.电子顺磁共振谱和红外光谱分析结果发现,150 keV电子辐照下SiO_2玻璃内部产生E'-center类型的缺陷,这是150 keV电子辐照下SiO_2玻璃光学性能发生退化的主要原因.In this paper,the properties and the evolutionary law of the defects of silica glass were studied under 150 keV electrons irradiation. The results of optical and electrical properties showed that the spectral transmittance and the average resistivity of silica glass gradually decreased with the increase of the irradiation fluence. Based on the analysis of the electron paramagnetic resonance spectroscopy and the infrared spectroscopy,it was found that E＇-center type defects were generated inside the silica glass under150 keV electrons irradiation. This is the main reason for the degradation of the optical properties of silica glass under 150 keV electron irradiation.

关 键 词：电子辐照 SIO2玻璃 透过率 微观缺陷 

分 类 号：O472[理学—半导体物理]