增益钳制式850 nm波长超辐射发光二极管设计研究  

Development of Gain-clamped 850 nm Superluminescent Diode

作　　者：祝子翔 张晶 孙春明 乔忠良 高欣 薄报学 李辉 王宪涛 魏志鹏 马晓辉 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《兵工学报》2018年第2期325-330,共6页Acta Armamentarii

基　　金：吉林省重大科技招标专项项目(20170203014GX);长春理工大学科技创新基金项目(XJJLG-2014-15)

摘　　要：为了提高超辐射发光二级管的光谱宽度和出光功率,设计了外延片有源区非均匀阱宽三量子阱结构和波导区非对称大光腔结构。在器件结构设计方面,利用增益钳制理论提出了器件新结构,设计了多波长增益钳制系统;在器件制备方面,采用纳米压印技术在器件脊形台面上制作了多波长表面分布式反馈钳制系统纳米柱。制备的器件泵浦区脊形条长350μm,吸收区长250μm,台宽5μm,台高1μm,在工作电流为160 m A时,室温连续输出功率14.63 m W,中心波长848.7 nm,半峰宽22 nm.这种新结构设计增益了器件非中心波长,抑制了中心波长法布里-珀罗振荡,同时实现了器件中心波长法布里-珀罗增益钳制。A three-quantum-well structure with nonuniform well width at active region of epitaxial wafer and a large asymmetric optical cavity structure at waveguide region are designed to improve the spectrum width and output power of superluminescent diode. A new device structure is proposed by using gainclamped theory,and a multi-wavelength gain clamping system is designed. The nanoimprint technology is used to prepare a nanorod for multi-wavelength surface distributed feedback clamping system on device ridge mesa. Ridge length of pumping region in the fabricated device is 350 μm,the length of absorption region is 250 μm,and the messa is 5 μm in width and 1 μm in height. When the working current is160 m A,the continuous output power at room temperature is 14. 63 m W,the central wavelength is848. 7 nm,and the half band width is 22 nm. The new structure design can be used to gain the non-central wavelength of device,suppress the F-P oscillation of central wavelength,expand the spectral width,and realize the gain clamping of central wavelength.

关 键 词：超辐射发光二极管 增益钳制 纳米柱 非对称波导结构 

分 类 号：TN248.4[电子电信—物理电子学]