高效除三氯氢硅中痕量硼、磷工艺研究进展  

Progress in the Technology of High Efficient Removal of Trace Boron and Phosphorus from Trichlorosilane

作　　者：钱浩 黄国强[1] 

机构地区：[1]天津大学化工学院,天津300072

出　　处：《化学工业与工程》2018年第2期42-48,共7页Chemical Industry and Engineering

摘　　要：改良西门子法是生产多晶硅的主流工艺。简述了多晶硅行业的生产背景和现状,介绍了多晶硅行业现今所面临的困境和多晶硅生产中原料三氯氢硅中痕量硼、磷杂质的高效分离方法,并讨论了多晶硅生产中原料三氯氢硅中硼、磷杂质的存在形式和分离难点,概述了多晶硅生产中原料三氯氢硅中痕量硼、磷杂质的多种高效分离方法,主要包括部分水解法、络合法、吸附法等。通过对各种分离方法进行综合性的分类和分析讨论,指出了现存方法的优缺点,提出了三氯氢硅中痕量硼、磷杂质分离技术在工业化时的关键难题,并对各种分离方法的应用前景进行了展望。The modified Siemens method is the mainstream process of polysilicon production.This review gives a general introduction to the background and status of polysilicon production.The plight in polysilicon industry and the high efficient separation method of trace boron and phosphorus impurities from trichlorosilane in polysilicon production are proposed.The existing form and separation difficulties of trace boron and phosphorus impurities from trichlorosilane in polysilicon production are discussed.The high efficient separation methods of trace boron and phosphorus impurities from trichlorosilane in polysilicon production,including partial hydrolysis、complexation,adsorption etc,are introduced.Through comprehensive classification and discussion,the advantages and disadvantages of the separation methods are summarized,key challenges in industrialization of the separation methods are brought forward,and the application foreground is expected.

关 键 词：多晶硅 三氯氢硅 硼 磷 络合 吸附 

分 类 号：TQ028.4[化学工程]