表面等离子体在氧化镓基紫外探测器中的应用  被引量:3

The applications of surface plasmons in Ga_2O_3 ultraviolet photodetector

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作  者:石雄林 刘宏宇[1] 候爽 钱凌轩[1] 刘兴钊[1] Shi Xionglin, Liu Hongyu, Hou Shuang, Qian Lingxuan, Liu Xingzhao(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, Chin)

机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731

出  处:《光电工程》2018年第2期80-87,共8页Opto-Electronic Engineering

基  金:国家自然科学基金资助项目(61504022)~~

摘  要:局域表面等离子体共振是一种改善光电探测器性能的有效方法。本文为了提高beta-氧化镓(b-Ga_2O_3)薄膜金属-半导体-金属(MSM)日盲紫外探测器的性能,提出了在beta-氧化镓薄膜表面利用快速热退火的方法形成分散的铝纳米粒子(Al-NPs),增强薄膜对光的吸收。运用此方法制备的Al-NPs/b-Ga_2O_3探测器不仅降低了暗电流,同时也提升了光响应度和探测率。在波长254 nm紫外光照、10 V偏压下,该器件的光响应度达到了2.7 A/W,探测率达到了1.35′1014cm×Hz1/2×W-1,与b-Ga_2O_3探测器相比,分别提升了1.5倍和2倍。Localized surface plasmon resonance(LSPR) provides an effective approach to further improve the performance of photodetectors. In this work, we introduce the Al nanoparticles(Al-NPs) on the surface of b-Ga2O3 thin film by rapid thermal annealing in order to improve the performance of b-Ga2O3 solar-blind ultraviolet photodetectors Al nanoparticles arrays, which can not only decrease the dark current but also enhance the responsivity and specific detectivity. As a result, the responsivity of b-Ga2O3-based metal-semiconductor-metal(MSM) solar-blind ultraviolet photodetectors with Al-NPs can reach 2.7 A/W, and the specific detectivity can reach 1.35′1014 cm×Hz1/2×W-1 under the 254 nm radiation and 10 V bias. Both parameters are more than 1.5 times and 2 times higher than those without Al nanoparticles, respectively.

关 键 词:局域表面等离子体共振 铝纳米粒子 beta-氧化镓 日盲紫外探测器 

分 类 号:TN23[电子电信—物理电子学]

 

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