T形阳极太赫兹GaAs肖特基二极管的设计与制备  

Design and Fabrication of T-gate THz GaAs Schottky Barrier Diode

作　　者：范道雨 林罡[1] 牛斌[1] 吴少兵[1] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2018年第1期40-44,共5页Research & Progress of SSE

摘　　要：通过对平面形太赫兹肖特基二极管的结构与寄生参数的分析优化,设计并研制了适用于太赫兹频段的不同阳极直径的管芯。管芯为小尺寸设计,采用双层胶电子束直写技术制作T形阳极,阳极剥离后采用100nm的SiO_2介质进行钝化保护,比传统工艺约500nm的SiO_2介质大幅降低,有效降低了器件寄生电容,研制出截止频率f_T(C_(j0))8THz、f_T(C_(total))3.9THz的管芯。通过直流I-V测试和小信号S参数测试提取管芯参数,并分析对比了不同阳极直径管芯的性能参数。Schottky barrier diode（SBD）for THz frequency application with different anode diameters was designed and fabricated after parasitic parameter analysis and structure optimization.The T-gate anode fabricated by electron beam lithography method and small chip size design was proved effectively to lower parasitic capacitance,for which the thickness of the dielectric deposited after lift-off was only 100 nm rather than 500 nm in traditional process,ultimately realizing the fabrication of SBD with 8 THz（fT（Cj0））and 3.9 THz（fT（Ctotal））cut-off frequency.Parameters were extracted through I-Vtest and S-parameter measurements and performance of SBD with different anode diameters was investigated.

关 键 词：太赫兹 肖特基二极管 T栅 寄生电容 串联电阻 

分 类 号：TN315.3[电子电信—物理电子学]