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作 者:孟晓凯[1] 赵春旺[1,2] MENG Xiao-kai1 ,ZHAO Chun-wang1,2(1. College of Science, Inner Mongolia University of Technology, Hohhot 010051, China ; 2. College of Arts and Sciences ,Shanghai Maritime University ,Shanghai 201306 ,Chin)
机构地区:[1]内蒙古工业大学理学院,呼和浩特010051 [2]上海海事大学文理学院,上海201306
出 处:《内蒙古大学学报(自然科学版)》2018年第2期182-187,共6页Journal of Inner Mongolia University:Natural Science Edition
基 金:国家自然科学基金资助项目(11672175;51261017)
摘 要:采用室温磁控溅射法在涂覆有氮化硅膜的硅片上制备Ni-Ti-Hf合金薄膜,使用扫描电子显微镜和X射线衍射仪分析了制备工艺和退火处理对薄膜形貌和结构的影响.结果表明,室温溅射所得薄膜为富(Ti+Hf)的非晶态,呈柱状生长方式.薄膜厚度随溅射做功呈良好递增关系.溅射态薄膜表面不平整,有明显起伏、裂纹及孔洞等缺陷,致密性较差;退火处理使薄膜发生结晶转变,无裂纹及孔洞等缺陷,致密性大大改善.随Hf含量增加,马氏体相变程度增大、晶格畸变增加.Ni-Ti-Hf alloy thin films were fabricated on the silicon wafers coated silicon nitride film using magnetic sputtering at room temperature. The effect of fabrication process and annealing treatment on the morphology and structure of the films was analyzed by scanning electron microscopy and X-ray diffrac- tometer. The results show that the films sputtered at room temperature are amorphous (Ti-k Hf)-rich films and exhibit the columnar growth. The thickness of the films increases linearly as increasing the deposition energy. The surface of a^sputtered films is not flat,exists the defects of obvious fluctuate,crack and hole, and the compactness is poor. The films are crystallized after annealing,the defects of crack and hole disap- pear and the compactness is largely improved. The degree of martensitic transformation and lattice distor- tion increases with the increase of Hf fraction.
关 键 词:Ni—Ti—Hf合金薄膜 磁控溅射 表面形貌 组织结构
分 类 号:TG139.6[一般工业技术—材料科学与工程]
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