衬底温度对FeCrCoNiMn高熵合金氮化物薄膜组织结构和电性能的影响  

The influence of substrate temperature on the structure and electrical properties of FeCrCoNiMn high entropy alloynitride films

作　　者：杨克蒋 张国庆[1] 汪亮兵 罗永春[1,2] YANG Ke-jiang1 , ZHANG Guo-qing1 , WANG Liang-bing2 , LUO Yong-chun1,2(1. Department of Materials Science and Engineer, Lanzhou University of Technology, Lanzhou 730050, Gansu, China; 2. State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, Gansu, Chin)

机构地区：[1]兰州理工大学材料科学与工程学院,甘肃兰州730050 [2]兰州理工大学有色金属先进加工与再利用省部共建国家重点实验室,甘肃兰州730050

出　　处：《金属功能材料》2018年第2期36-42,共7页Metallic Functional Materials

摘　　要：采用射频反应磁控溅射法在Si（100）衬底上制备出纳米晶高熵合金FeCrCoNiMn氮化物薄膜,结合场发射扫描电子显微镜（FESEM）、电子显微探针（EPMA）、X射线光电子能谱分析仪（XPS）、原子力显微镜（AFM）及四点探针（FPP）研究了衬底温度（40、300、500℃）对沉积薄膜的表面形貌、化学组成、微观结构和导电性能的影响。结果表明,衬底温度对高熵合金FeCrCoNiMn-N薄膜的形貌、组织结构和导电性能有显著影响。随衬底温度的升高,薄膜的表面粗糙度和颗粒/晶粒尺寸增大;与氮反应沉积后,含氮高熵合金薄膜中形成了Mn3N2、MnN、Cr2N和CrN金属氮化物,而Fe、Ni和Co元素则以Fe-Ni-Co合金相形式存在。不含氮合金薄膜其电阻率高达131.78mΩ·cm,加入氮沉积后,随衬底温度的增加,含氮薄膜的电阻率逐渐减小（6.14~0.43mΩ·cm）,含氮合金薄膜的电阻率明显小于合金靶材的沉积膜,衬底温度500℃时薄膜的电阻率达到最小值0.43mΩ·cm。The nanostructured FeCrCoNiMn high entropy alloy nitride films were prepared on Si（100）substrate by radio-frequency reactive magnetron sputtering.The influence of substrate temperature（40,300,500℃）on morphology,elemental composition,microstructure and electrical resistivity of the films were investigated by XRD,FESEM,AFM,EPMA,XPS and four point probe tester.The study showed that the substrate temperature had a significant influence on the morphology,microstructure and electrical conductivity of the films.With the increase of substrate temperature,surface roughness and the particles/grain size of films increased gradually.The films formed metal nitrides Mn3 N2,CrN,Cr2 N and CrN,the Fe,Ni,Co elements were existed in the form of Fe-Ni-Co alloy.The electrical resistivity of the high entropy alloy film was as high as 131.78 mΩ·cm.With increasing substrate temperature,the electrical resistivity of the alloy nitride films gradually decreased from 6.14 to 0.43 mΩ·cm,and the resistivity of alloy nitride films was significantly lower than that of the high entropy alloy film,and the resistivity reached a minimum value of 0.43 mΩ·cm at 500℃ substrate temperature.

关 键 词：反应磁控溅射 高熵合金薄膜 氮化物 导电性 

分 类 号：TB306[一般工业技术—材料科学与工程]