基于GaN的S波段固态发射机的设计  

Design of an S-Band Solid-State Transmitter Based on GaN

作　　者：郑智潜[1] 姚武生[1] 由金光[1] ZHENG Zhi-qian, YAO Wu-sheng, YOU Jin-guang(East China Research Institute of Electronic Engineering, Hefei 230031, Chin)

机构地区：[1]华东电子工程研究所,合肥230031

出　　处：《电子信息对抗技术》2018年第2期85-89,共5页Electronic Information Warfare Technology

摘　　要：介绍了一种基于GaN功率管应用于相控阵雷达的S波段全液冷全固态发射机,利用GaN的高输出功率、高效率特性,对本发射机系统的设计思想、结构组成及工作原理作了详细分析,对采用的模块化设计技术、电磁兼容技术及液冷热设计都给出了重点介绍。实现了在20%占空比、总输出功率不小于32kW和工作效率不低于30%指标要求。An S-band solid state transmitter is introduced based on the GaN transistor applied to the phased array radar. Using the extraordinary characteristics of GaN transistor with high output power and high efficiency, the design method, structure and work principle of the transmitter system are analyzed in detail. The electromagnetic compatibility （EMC） technology and the liq- uid cooling design adopted in the transmitter are expatiated specially. Excellent properties are realized with output peek power above 32kW with 20% duty and high efficiency up to 30%.

关 键 词：固态发射机 GAN 并联均流 热设计 

分 类 号：TN957.3[电子电信—信号与信息处理]