催化剂及时间对氧化镓表面形貌及结构的影响  

EFFECT OF CATALYST AND TIME ON THE MORPHOLOGY AND STRUCTURE OF GA_2O_3

作　　者：孟津[1] 李玉国[1] 王路 Meng Jin ,Li Yuguo, Wang Lu(School of Physics and Electronics, Shandong Normal University, 250358, Jinan, China)

机构地区：[1]山东师范大学物理与电子科学学院,济南250358

出　　处：《山东师范大学学报（自然科学版）》2018年第1期76-81,共6页Journal of Shandong Normal University(Natural Science)

摘　　要：通过热蒸发法,使用Ga_2O_3粉末作为前驱材料分别在无催化剂Si(111)基底和镀金Si(111)基底上制备出Ga_2O_3纳米结构.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射仪(XRD)以及高分辨透射电子显微镜(HRTEM)对样品的表面形貌进行表征.结果显示,生成的纳米结构为β-Ga_2O_3单晶,催化剂及制备时间对样品的形貌有显著的影响.最后我们研究了不同条件下Ga_2O_3的生长机理.不使用催化剂所生长的β-Ga_2O_3为VL生长机制,使用Au作为催化剂所生长的Ga_2O_3为VLS生长机制.Through the namesthermal evaporation method, we have synthesized the Ga2O3 nanostructure on silicon substrates with and without Au as a catalyst, respectively. Ga2 O3 powder source is the precursor, and the transport gas is ambient argon. We discussed the different morphology of the substrate type （ silicon substrate with and without catalyst and Au as catalyst deposited on the silicon substrate, for the sake of inquire promote the nucleation of nanostructures） and different times on the growth of β- Ga2 O3 nanostruetures. On the morphological and structure of as-synthesized Ga2O3 nanostruetures, the more influential parameters were the shape and size analyzed by scanning electron microscope. The possible growth mechanism of β- Ga2O3 nanostructures in the vapor-solid growth mechanism was also proposed.

关 键 词：β—Ga2O3 纳米线 催化剂 热蒸发法 反应时间 

分 类 号：O484.5[理学—固体物理]