Four-junction AlGaAs/GaAs laser power converter  

作　　者：Jie Huang Yurun Sun Yongming Zhao Shuzhen Yu Jianrong Dong Jiping Xue Chi Xue Jin Wang Yunqing Lu Yanwen Ding 

机构地区：[1]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Zhongtian Technology Group Co. Ltd, Nantong 226009, China [4]School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

出　　处：《Journal of Semiconductors》2018年第4期44-48,共5页半导体学报（英文版）

基　　金：Project financially supported by the National Natural Science Foundation of China(No.61376065);Zhongtian Technology Group Co.Ltd

摘　　要：Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.Four-junction A1GaAs/GaAs laser power converters （LPCs） with n＋-GaAs/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.

关 键 词：laser power converters （LPCs） metal-organic chemical vapor deposition （MOCVD） GAAS 

分 类 号：TN24[电子电信—物理电子学]