面向VCSEL的Al_(0.98)Ga_(0.02)As薄膜湿法氧化的研究  

Wet Oxidation Process to Al_(0.98)Ga_(0.02)As Layer for the Vertical-CavitySurface-Emitting-Laser Fabrications

作　　者：林涛[1] 张天杰 李晶晶 郭恩民 宁少欢 段玉鹏 林楠[3] 祁琼[3] 马骁宇[3] LIN Tao1, ZHANG Tian-Jie1, LI Jing-Jing1, GUO En-Min1, NING Shao-Huan1, DUAN Yu-Peng2, LIN Nan3, QI Qiong3, MA Xiao-Yu3(1. College of Automation and Information Engineering, Xi＇an University of Technology, Xi＇an 710048, China; 2. College of Physics, Northwestern University, Xi＇an 710069, China; 3. National Engineering Research Center for Optoelectric Devices, In- stitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Chin)

机构地区：[1]西安理工大学电子工程系,西安710048 [2]西北大学物理学院,西安710069 [3]中国科学院半导体研究所光电子器件国家工程中心,北京100083

出　　处：《无机材料学报》2018年第3期266-272,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(61306057);陕西省自然科学基础研究计划(2017JM6042)~~

摘　　要：为了系统研究VCSEL制作中的湿法氧化过程和机理,设计了专门的材料结构并采用MOCVD技术进行外延生长。对经过光刻和干法刻蚀形成的台面结构样品进行不同时间的湿法氧化,由表面形貌及断面结构来确定氧化程度。研究发现,氧化时间较短时,Al_(0.98)Ga_(0.02)As层的横向氧化深度随氧化时间呈线性变化;随着氧化时间增加,横向氧化深度与氧化时间呈抛物线变化,并渐趋于饱和。此外实验中发现Al_(0.98)Ga_(0.02)As层的湿法氧化速度可比Al_(0.9)Ga_(0.1)As层高一个数量级,且Al_(0.9)Ga_(0.1)As层的湿法氧化速度随其层厚增加而增大。最后根据修正的一维Deal-Grove氧化模型计算了受限空间内Al_(0.98)Ga_(0.02)As层横向氧化深度随氧化时间的变化关系。To study the wet oxidation process and mechanism in the Vertical-Cavity-Surface-Emitting-Laser（VCSEL） fabrications,a special material structure was designed and grown by the Metal-Organic Chemical Vapor Deposition（MOCVD） method.The samples formed by photolithography and dry etching were subjected to wet oxidation for different time,and the oxidation degree was determined by the surface morphology and the cross-sectional structure.In this study,a linear tendency was revealed between oxidation depth and oxidation time during a relatively short oxidation period,then it transformed into parabolic tendency and gradually became saturated with increasing oxidation time.Moreover,it was found that the oxidation rate of Al0.98Ga0.02As was higher than that of Al0.9Ga0.1As layer by one order of magnitude,and the speed of oxidation processing was accelerated as the Al0.9Ga0.1As layer thickened.Finally,the lateral oxidation process of Al0.98Ga0.02As layer in the confined space was interpreted by a modified one-dimensional Deal-Grove model.

关 键 词：垂直腔面发射激光器 湿法氧化 砷化铝镓 金属有机化学气相淀积 

分 类 号：TQ174[化学工程—陶瓷工业]