高性能波导集成型锗pin光电探测器的制备  

Fabrication of a High-Performance Waveguide-Integrated Germanium pin Photodetector

作　　者：刘道群 李志华[1] 冯俊波[3] 唐波[1] 张鹏 王桂磊[1] Liu Daoqun;Li Zhihua;Feng Junbo;Tang Bo;Zhang Peng;Wang Guilei(Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics , Chinese Academy of Science, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China;The 38th Research Institute, CETC, Hefei 230088, China)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049 [3]中国电子科技集团公司第三十八研究所,合肥230088

出　　处：《微纳电子技术》2018年第5期305-311,共7页Micronanoelectronic Technology

基　　金：国家科技重大专项(2017ZX02315004)

摘　　要：采用CMOS兼容工艺,在绝缘体上硅（SOI）晶圆片上制备了高性能波导集成型锗pin光电探测器。该光电探测器锗区长度为15μm,宽度分别为1,2,3,4和5μm。光波导与探测器间的光耦合为倏逝波耦合。为了进一步提高探测器的性能,在结构设计上采用了聚焦耦合光栅及楔形耦合增强结构,在材料生长方面采用了选择性外延生长法,以提高锗的质量。通过暗电流、响应度、带宽及眼图测试对光电探测器性能进行了表征。测试结果表明在-2 V的反向偏压下,尺寸为15μm×4μm的光电探测器暗电流低至169 nA,其在波长1 530 nm处的最高响应度为0.43 A/W,3 dB带宽高达48 GHz并获得40 Gbit/s的清晰眼图。A high-performance waveguide-integrated germanium（Ge）pin photodetector was fabricated on the patterned silicon-on-insulator（SOI）wafer by the process compatible with the CMOS technique.The length of the Ge region in the photodetector is 15μm,while the width increases from1μm to 5μm with an increment of 1μm.The light is evanescently coupled from the silicon waveguide to the photodetector.In order to further improve the performance of the detector,a focusing-coupling grating and a wedge-coupling enhancement structure were adopted in the structure design,and the selective epitaxial growth method was used to improve the quality of the Ge.The performances of the device were characterized by a series of the tests,including the dark current,responsivity,frequency bandwidth and eye diagram.The test results show that for the photodetector with a size of 15μm×4μm at-2 V reverse bias voltage,the dark current is as low as 169 nA,the maximum responsivity and 3 dB bandwidth are 0.43 A/W and 48 GHz at1 530 nm wavelength,respectively,and the obtained 40 Gbit/s eye diagram is clear.

关 键 词：光电探测器 波导集成 选择性外延 锗(Ge) PIN 绝缘体上硅(SOI) 

分 类 号：TN36[电子电信—物理电子学]