碳化硅衬底沉积高取向金刚石薄膜  

Deposition of High Orientation Diamond Film on Silicon Carbide Substrate

作　　者：曹阳 满卫东[1] 吕继磊[2] 刘伟[1,2] 孙洁[2] 江南[2] Cao Yang;Man Weidong;Lv Jilei;Liu wei;Sun jie;Jiang nan(Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province,Wuhan Institute of Technology, Wuhan Hubei 430073, China;Ningbo Material Technology and Engineering Research Institute, Chinese Academy of Sciences Zhe Jiang, Ningbo Zhejiang 315201, China)

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北武汉430070 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《硬质合金》2017年第6期407-412,共6页Cemented Carbides

摘　　要：采用直流辉光放电等离子体设备在单晶碳化硅表面沉积高晶取向金刚石薄膜,研究了预处理方法、基片温度以及甲烷浓度(甲烷与氢气的体积比)对金刚石薄膜晶粒取向的影响。用SEM、Raman等测试方法对金刚石薄膜进行表征。结果表明:研磨处理可以提高金刚石形核密度,高的形核密度有利于金刚石薄膜的沉积;过高或过低的基片温度会使得金刚石薄膜表现出(111)面生长的趋势;高甲烷浓度和低甲烷浓度也会使得金刚石薄膜晶粒取向发生改变。最终采用850℃以及5%甲烷浓度这一沉积参数进行金刚石薄膜的沉积,制备出了取向度非常好的(100)面金刚石薄膜。The high crystal orientation diamond films were deposited on the surface of single crystal silicon carbide by DC glow discharge plasma CVD. The effects of preprocessing method,substrate temperature and methane concentration（the volume ratio of methane to hydrogen） on the grain orientation of diamond films were investigated. The diamond films were characterized by SEM（scanning electron microscope） and Raman spectra. The results show that nuclear density of diamond can be improved by grinding, and the high density of nucleation is beneficial to the deposition of diamond films. Too high or too low substrate temperature will make the diamond film to show the（111） surface growth trend. The high methane concentration and low methane concentration also change the grain orientation of the diamond film. Finally, the deposition of diamond films was carried out with 850 ℃ and 5% methane concentration, and the（100） plane diamond films with excellent orientation were prepared.

关 键 词：DC-CVD 碳化硅 沉积参数 高取向 金刚石薄膜 

分 类 号：TB383.2[一般工业技术—材料科学与工程]