锗单晶多线切割工艺研究  

Research on the Process of Multi Wire Sawing for Germanium Wafers

作　　者：董军恒[1] 李聪 DONG Junheng;LI Cong(The 46th Research Institute of CETC, Tianjin 300220, Chin)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2018年第2期23-26,共4页Equipment for Electronic Products Manufacturing

摘　　要：研究了变速切割及不同环境温度下定速切割对锗片翘曲度的影响。结果表明:锗单晶因其热学性能较差,在切割过程中降低热量导入晶体、提高晶体热量的导出是决定锗晶片翘曲度的重要因素;采用180μm/min定速切割的锗晶片翘曲度要比采用Si单晶与Ge单晶热学工艺变速切割锗片的翘曲度小6~7μm;环境温度越低,热量导出速度越快,切割的锗晶片翘曲度越小,当环境温度为20℃时,180μm/min定速切割的锗晶片翘曲度能达到12.4μm。The effect of temperature variation and the speed during slicing on the warp of Germanium wafer is studied in this paper. The results show that reduce the thermal import to germanium and improve the thermal export to germanium is one of the important factors to reduce the warp of germanium wafer due to the poor thermal properties;The warp of germanium wafer slicing with 180 μm/min is 6-7 μm smaller than slicing with the speed follow table 1. Because of the lower environment temperature,the faster speed of the thermal export to germanium wafer,and the warp of germanium wafer sliced is the smaller. The warp of germanium wafer slicing with 180 μm/min can reach 12.4 μm when the environment temperature reach 20 ℃.

关 键 词：翘曲度 锗片 热量控制 环境温度 

分 类 号：TN305[电子电信—物理电子学]