退火温度对ZnO纳米线阵列形貌、结构和光学特性的影响  

Effects of annealing temperature on morphology,structure and optical properties of well-aligned ZnO nanowire arrays

作　　者：殷磊 丁和胜 袁兆林[1] 任亚杰[1] 张鹏超[2] 邓建平[2] YIN Lei;DING He-sheng;YUAN Zhao-lin;REN Ya-jie;ZHANG Peng-chao;DENG Jian- ping(School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, China;Shaanxi Key Laboratory of Industrial Automation,Shaanxi University of Technology, Hanzhong 723001, China)

机构地区：[1]陕西理工大学物理与电信工程学院,陕西汉中723001 [2]陕西理工大学陕西省工业自动化重点实验室,陕西汉中723001

出　　处：《光电子．激光》2018年第4期370-376,共7页Journal of Optoelectronics·Laser

基　　金：陕西省自然科学基金(2017JM6090);陕西省教育厅自然科学基金(16JK1135)资助项目

摘　　要：为获得高质量的良好取向和低成本的ZnO纳米线阵列,利用化学浴沉积法,在石英玻璃基底上制备ZnO纳米线阵列,在Ar气气氛中对ZnO纳米线阵列分别进行400、600和800℃的退火1h处理,利用场发射扫描电子显微镜(FESEM)、X射线衍射仪(XRD)、紫外-可见分光光度计和荧光光谱仪分别研究了它们的形貌、晶相结构和光学特性。结果显示,退火处理后,ZnO纳米线平均直径有所增加,800℃退火后,相邻ZnO纳米线产生粘结。随着退火温度增加,ZnO纳米线阵列的结晶质量逐渐提高,退火至600℃时,其结晶质量最佳;在可见光区的光学透过率和光学带宽随退火温度增加而下降。未退火和退火400℃的ZnO纳米线阵列,仅在390nm波长处附近出现一个很弱的近带边发射峰,当退火温度在600℃以上时,近带边发射峰迅速增强,并出现一个较弱绿色发光带。In order to develop low-cost well-aligned ZnO nanowire arrays with high quality,in this paper, ZnO nanowire arrays were fabricated on quartz glass substrates by chemical bath deposition. The ZnO nanowire arrays were then annealed at 400 ℃ ,600 ℃ and 800 ℃ for lh in At,respectively. Their mor- pbology,crystalline structure and optical properties were investigated using field emission scanning elec- tron microscopy （FESEM）, X-ray diffractometer （XRD）, UV-Vis spectrophotometer and fluorescence spectrometer,respectively. The results show that the average diameter of ZnO nanowires somewhat in- creases after annealing,and after being annealed at 800 ℃, the adjacent ZnO nanowires are bonded to- gether. With the increase of annealing temperature, the crystalline quality of ZnO nanowire arrays is gradually improved, and the crystalline quality is the best when annealed at 600 ℃. Both the optical transmittance in the visible region and optical bandgap of ZnO nanowire arrays decrease as the annealing temperature increases. Only a weak near-hand emission peak located at about 390 nm can be observed for the unannealed and annealed samples at 400 ℃. When the annealing temperature is above 600℃, the near-band emission peak becomes strong sharply and a new weak green emission band can be found.

关 键 词：ZNO纳米线阵列 化学浴沉积法 退火温度 光致发光(PL) 

分 类 号：O472.3[理学—半导体物理]