掺杂对二氧化锡薄膜光电性能的影响  

Effect of Doping on the Photoelectric Properties of Tin Dioxide Thin Films

作　　者：王立坤[1] 郁建元[1,2] 王丽[1] 牛孝友 付晨 邱茹蒙 晏伟静 赵洪力[1] WANG Likun;YU Jianyuan;WANG Li;NIU Xiaoyou;FU Chen;QIU Rumeng;YAN Weiing;ZHAO Hongli(College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, Hebei, China;Department of Environmental and Chemical Engineering, Tangshan University, Tangshan 063000, Hebei, China)

机构地区：[1]燕山大学材料科学与工程学院,河北秦皇岛066004 [2]唐山学院环境与化学工程系,河北唐山063000

出　　处：《硅酸盐学报》2018年第4期590-597,共8页Journal of The Chinese Ceramic Society

基　　金：国家重点研发计划资助项目(NO.2016YFB0303902);河北省应用基础研究计划重点基础研究资助项目(17961109D)

摘　　要：二氧化锡（SnO2）是一种重要的透明导电金属氧化物半导体材料，掺杂可使其光电性能得到显著改善，拓展其应用领域。分析了SnO2薄膜的导电机制、载流子散射机理及近年来国内外学者对不同类型掺杂的SnO2薄膜的研究。掺杂引入的缺陷能级增加了载流子浓度，提高了薄膜的导电性。杂质离子散射和晶界散射是影响薄膜载流子迁移率的主要散射机制。光电性能严重依赖于掺杂元素的种类及掺杂量，多元共掺杂是极具发展潜力的方法。Tin dioxide （SnO2） is an important transparent conductive metal oxide semiconductor, its electrical and optical properties can be significantly improved by doping, and the applications are expanded. Recent studies on the conductive mechanism, scattering mechanism of SnO2 film as well as different doped SnO2 films were reviewed. The defect levels introduced by the doping increase the carrier concentration and improve the conductivity of the film. Impurity ion scattering and grain boundary scattering are the main scattering mechanisms that affect the mobility of the films. The electrical and optical properties are closely related to the type and amount of doping elements. Multi-element co-doping is a promising method.

关 键 词：二氧化锡薄膜 掺杂 导电机制 散射机理 光电性能 

分 类 号：TB43[一般工业技术]