利用三量子阱结构拓宽1550nm InGaAlAs超辐射发光管光谱  

Spectrum Broadening of 1 550nm InGaAlAs Superluminescent Diode Using Three-quantum-well Structure

作　　者：孙春明 张晶 祝子翔 陈锋 SUN Chunming;ZHANG Jing;ZHU Zixiang;CHEN Feng(College of Optical Electronics Engineering, Changchun University of Science and Technology, Changchun, 130022, CHN;State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology, Changchun, 130022, CHN;College of Optical Electronics Engineering, Changchun, 130022, CHN)

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《固体电子学研究与进展》2018年第2期121-126,共6页Research & Progress of SSE

基　　金：吉林省重大项目招标(20170203014GX)

摘　　要：为了拓宽1 550nm InGaAlAs超辐射发光二极管(SLD)的输出光谱,采用三量子阱结构(分别对应1 530、1 550、1 570nm中心激射波长)作为有源区制作了1 550nm SLD,并在器件非出射端部分制作成非注入吸收区,通过吸收区抑制激射。实验结果表明研制的SLD最大输出功率为26.1mW时,中心波长为1 567nm。最大光谱半高宽(FWHM)大于44nm。此外,器件即使在最大输出功率下,仍然具有较宽的光谱。To broaden the output spectrum of 1 550 nm InGaAlAs superluminescent diodes（SLD）,a three-quantum-well（corresponding to 1 530 nm,1 550 nm and 1 570 nm center lasing wavelength,respectively）structure active region was used to fabricate the 1 550 nm SLD.The non exit end of the device was fabricated as a non injection absorption region through which the lasing can be suppressed.The experiment results show that the as-fabricated SLD produced a maximum power of 26.1 mW at the peak wavelength of 1 567 nm.And its full width at half maximum（FWHM）is greater than 44 nm.Moreover,even under its maximum output power,the device still has a wider spectrum.

关 键 词：超辐射发光二极管 三量子阱 复合效率 中心波长 

分 类 号：TN365[电子电信—物理电子学]