RS码和双总线结构的高性能闪存图像存储器  

High Performance Flash Image Recorder Based on RS Code and Dual-bus Structure

作　　者：余辉龙[1] 张健[1] 李清[2] 覃翠[1] 赵静[1] 花涛[1] YU Hui-long;ZHANG Jian;LI Qing;QIN Cui;ZHAO Jing;HUA Tao(Nanj ing Institute of Technology, School of Communication Engineering, Nanj I ng 211167, China;North University of China, School of Mechanical Engineering, Taiyuan 030051, China)

机构地区：[1]南京工程学院通信工程学院,江苏南京211167 [2]中北大学机械工程学院,山西太原030051

出　　处：《微电子学与计算机》2018年第5期5-10,共6页Microelectronics & Computer

基　　金：国家自然科学基金(61501222);山西省自然科学基金(2015011060);南京工程学院校级科研基金(YKJ201322;CKJB201309;CKLB201406)

摘　　要：空间存储器存在高能粒子反转问题,提出了采用变长匹配的RS码纠错的大容量NAND型闪存图像存储器.为保证存储器实时纠错编译码时不影响持续读写速度,提出了主副总线的闪存和SRAM阵列备份的体系结构.在此基础上,针对图像数据源分辨率变化和NAND闪存是页存储体系的特点,提出了变长匹配的RS码字页编程方法,可纠错有限字节的随机错误,实现图像数据源、纠错码和闪存存储的匹配.针对突发长码错误,提出了固定周期的数据交织方法.固化参数后实验结果表明,在双总线系统架构下,能够保证系统存取速度,图像存储速率达到1.44Gbps,读取速率达到1.2Gbps,单页纠错能力突破30byte,同误比特率下信噪比提高了2dB以上.Space recorder exists high-energy particle reverse.A high capacity NandFlash image recorder with variable matching length correctable RS code is proposed.SRAM array backup and dual bus storage structure is established.According to variable resolving of the image data and the page characteristics of NandFlash storage system,variable matching length of RS code programming method is proposed to correct limited bytes of random error.Then the image data source,error correcting codes and flash storage array are in organic combination.According to the long burst error,fixed cycle data interleaving method is proposed.The fixed parameter experiment show that the proposed algorithm has low complexity,the storage speed is up to 1.44 Gbps,read speed is up to 1.2 Gbps,and error correction ability every page is up to 30 byte and the SNR is improved by more than 2 dB.

关 键 词：RS码 双总线结构 纠错匹配 NAND闪存 数据交织 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]