脉冲放电和高能球磨组合制备纳米硅颗粒的储锂性能研究  

Study on Lithium Storage Properties of Nanometer Silicon Particles Prepared by Pulse Discharge and High-energy Ball Milling

作　　者：孙洪凯[1] 赵明才[1] 张娟 曹祥威 汪炜[1] SUN Hongkai;ZHAO Mingcai;ZHANG Juan;CAO Xiangwei;WANG Wei(College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China)

机构地区：[1]南京航空航天大学机电学院,江苏南京210016

出　　处：《电加工与模具》2018年第A01期27-32,53,共7页Electromachining & Mould

基　　金：国家自然科学基金资助项目(51675275)

摘　　要：按照一种高质高效、自上而下的纳米硅制备方法,以P型重掺杂晶体硅和N型重掺杂晶体硅为原料,探究不同重掺杂类型对电化学性能的影响。采用脉冲放电和高能球磨组合法制备纳米硅颗粒,获得平均粒径(D50)约为100 nm且尺寸分布均匀的硅颗粒。结果表明:P型重掺杂纳米硅的首次充电比容量为1646.5 m Ah/g、库伦效率为65.92%,经过50圈循环,其可逆比容量保持为1353.7 m Ah/g;N型重掺杂纳米硅的首次充电比容量为1730.7 m Ah/g、库伦效率为66.04%,经50圈循环,其可逆比容量保持为1400.1 m Ah/g。In this paper, according to a high. quality and efficiency, top-down nano-silicon preparation method. The effects of doping concentration and doping type on the electrochemical properties were investigated by using P-type heavily doped crystalline silicon and N-type heavily doped crystalline silicon. By using pulsed discharge and high energy ball milling to prepare the nanosized silicon particles,the mieroparticles were obtained with uniform size and average particle size （D50） at about 100 nm. The first time charge specific capacity of P-type heavily doped nano-silicon is 1646.5 mAh/g,the Coulombic efficiency is 65.92%, and after 50 cycles,the reversible specific capacity is maintained at 1353.7mAh/g. The first time charge specific capacity of N-type lightly heavily doped nano-silicon is 1730.7mAh/g,the Coulombic efficiency is 66.04% ,and after 50 cycles, the reversible specific capacity is maintained at 1400.1 mAh/g.

关 键 词：纳米硅 脉冲放电 高能球磨 重掺杂 

分 类 号：TG662[金属学及工艺—金属切削加工及机床]