氮化钛薄膜二次电子发射特性研究  

Secondary Electron Emission Characteristics of Titanium Nitride Thin Film

作　　者：王丹[1] 贺永宁[1] 崔万照[2] WANG Dan1, HE Yong-ning1, CUI Wan-zhao2(1. School of Microelectronics, Xi＇an Jiaotong University, Xi＇an 710049, China; 2.Key Laboratory of National Defense Science and Technology on Space Microwave, China Academy of Space Technology （Xi＇an）, Xi＇an 710100, China)

机构地区：[1]西安交通大学微电子学院,西安710049 [2]中国空间技术研究院西安分院空间微波技术国防科技重点实验室,西安710100

出　　处：《表面技术》2018年第5期9-14,共6页Surface Technology

基　　金：国家自然科学基金联合基金(U1537211)~~

摘　　要：目的研究氮化钛薄膜的部分物理特性及真空中的电子发射特性,验证氮化钛薄膜具有相对较好的电导特性及较低的电子发射系数,证明氮化钛薄膜在空间大功率微波器件表面处理中有良好的应用前景。方法使用射频磁控溅射技术在单晶硅及玻璃片表面制备氮化钛薄膜,实验中通过调节溅射过程中氮气与氩气的气体流量比控制薄膜中的氮钛原子比。使用SEM对氮化钛薄膜的表面形貌及厚度进行表征。使用超高真空二次电子发射特性研究平台对氮化钛薄膜的二次电子发射特性进行表征。结果通过调节溅射过程中的氮气氩气流量比,能够有效控制薄膜中氮钛两种元素的含量,进而改变氮化钛薄膜的结晶方式和其他物理特性。当氮氩气体流量比约为10:15时,薄膜中氮钛原子比约为1:1。电阻率测试结果表明,薄膜中氮钛原子比越接近1:1,薄膜的电阻率越低。二次电子产额(SEY)测试结果表明,所制备氮化钛薄膜的最小SEY峰值约为1.46,低于平滑金(~1.8)、银(~2.2)表面的SEY。结论氮化钛薄膜具有较好的电导特性及较低的SEY,且其在真空环境中有良好的稳定性,能在不影响微波器件表面损耗的情况下,有效降低器件表面发生电子倍增的风险。The work aims to investigate physical characteristics and secondary electron emission（SEE） characteristics of titanium nitride（TiN） thin film in vacuum, and verify its good conductivity and relatively low secondary electron yield（SEY） as well as its well application in the field of treating the surfaces of the space high power microwave component. Radio frequency magnetron sputtering was adopted to prepare the TiN thin films on the substrates of monocrystal silicon sheets and glass sheets. Atomic ratio of nitrogen（N） and titanium（Ti） was controlled by adjusting the gas flow ratio of N2 and Ar during sputtering. SEM was utilized to characterize the surface morphology and thickness of the TiN films. The SEE research platform with ultrahigh vacuum was used to characterize the SEE characteristic of the TiN films. The contents of N and Ti elements in thin films could be effectively controlled by adjusting the gas flow ratio of N2 and Ar during sputtering and then the crystallization mode and other physical properties of titanium nitride thin film were changed. When the gas flow ratio of N2 and Ar was 10：15, atomic ratio of N and Ti in the film was about 1：1. Through the resistivity test, the closer the atomic ratio of N and Ti in the film got to 1：1, the lower the resistivity of film was. From SEY test results, the lowest peak value of SEY in TiN films was about 1.46 and lower than that of SEY in flat gold film（-1.8） and flat silver film（-2.2）. TiN thin films possess good conductivity and lower SEY as well as favorable stability in vacuum environment. Therefore, TiN thin films can effectively lower the risk of multipactor without influencing the surface loss of microwave components.

关 键 词：氮化钛 微放电 二次电子 薄膜电阻 能谱 电子产额 

分 类 号：TG174.442[金属学及工艺—金属表面处理]