具有提高Q值退耦结构的MEMS谐振器研究  

An Energy-Decoupling Frame Structure MEMS Resonator for Q–Enhancement

作　　者：鲍景富[1] 张超[1] 吴兆辉 BAO Jing-fu;ZHANG Chao;and WU Zhao-hui(School of Electrical Engineering, University of Electronic Science and Technology of China Chengdu 611731)

机构地区：[1]电子科技大学电子工程学院,成都611731

出　　处：《电子科技大学学报》2018年第3期397-401,共5页Journal of University of Electronic Science and Technology of China

基　　金：国家自然科学基金(U1430102)

摘　　要：为了提高MEMS谐振器的品质因数(Q值),该文设计一个微型的具有能量退耦作用的外框作为支撑结构。所设计的Al N压电谐振器工作在30 MHz横向振动模态,其Q值可以达到4.3×10~4,对应的f·Q乘积为1.29×10^(12)。谐振器频率与外框的机械谐振频率比值约10:1,减小了谐振器到基底的能量耦合,从而降低能量损耗并提高谐振器Q值。通过理论和有限元分析并对谐振器的频率响应进行建模,两种方法的模型结果一致,说明了具有能量退耦外框的谐振器能降低锚点造成的能量损耗,从而有效地提高横向振动模态Al N压电谐振器的Q值。In order to enhance the quality factor（Q） of micro-electro-mechanical system（MEMS） resonator, this paper proposes an energy-decoupling frame structure which is applied in an MEMS resonator for energy decoupling and Q enhancement. An aluminium nitride（Al N） piezoelectric resonator is designed to work at 30 MHz frequency（f） in the lateral-extension mode. The resonator Q is significantly enlarged to 4.3×10^4 and the value of f·Q reaches to 1.29×10^12. The energy coupling between the resonator and the substrate is effectively reduced by controlling the resonant frequency ratio of the resonator to the frame structure in around 10：1. Both theoretical analysis and finite-element analysis（FEA） simulation show that the energy loss reduction and Q enhancement of resonator can be achieved by using the proposed structure.

关 键 词：AlN压电谐振器 退耦结构 MEMS Q值 

分 类 号：TN713[电子电信—电路与系统]