1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers  

作　　者：JUN WANG HAIYANG HU HAWING YIN YIMING BAI JIAN LI XIN WEI YUANYUAN LIU YONGQING HUANG XIAOMIN REN HUIYUN LIU 

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China [2]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China [3]Laboratory of Nano Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [4]Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [5]Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK

出　　处：《Photonics Research》2018年第4期321-325,共5页光子学研究（英文版）

基　　金：Beijing University of Posts and Telecommunications(BUPT)(IPOC2016ZT01);National Natural Science Foundation of China(NSFC)(61474008,61574019,61674020);International Science&Technology Cooperation Program of China(2011DFR11010);111 Project of China(B07005)

摘　　要：We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and an Al_(0.53)Ga_(0.47)As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ~1.3 μm has been achieved with a threshold density of 737 A∕cm^2 and a single-facet output power of 21.8 mW.We report on the first electrically pumped continuous-wave （CW） InAs/GaAs quantum dot （QD） laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga0.51In0.49P upper cladding layer and an Al0.53Ga0.47As lower cladding layer was directly grown on Si by metal-organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper layer grown at a low temperature stripe width were fabricated and been achieved with a threshold Chinese Laser Press cladding of 550℃. Broad-stripe edge-emitting lasers with 2-ram cavity length and 15-μm characterized. Under CW density of 737 A/cm2 and operation, room-temperature lasing at-1.3 μm has a single-facet output power of 21.8 mW.

关 键 词：量子点 激光 通讯技术 发展现状 

分 类 号：O471.1[理学—半导体物理] TN241[理学—物理]