纳米器件空间辐射效应机理和模拟试验技术研究进展  

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

作　　者：陈伟[1] 刘杰[2] 马晓华[3] 郭刚 赵元富 郭晓强[1] 罗尹虹[1] 姚志斌[1] 丁李利[1] 王晨辉[1] 陈荣梅[1,6] 何宝平 赵雯[1] 张凤祁[1] 马武英[1] 翟鹏飞[2] 王祖军[1] 刘天奇[2] 郭红霞[1] 刘建德[2] 杨海亮[1] 胡培培[2] 丛培天[1] 李宗臻[2] Wei Chen;Jie Liu;Xiaohua Ma;Gang Guo;Yuanfu Zhao;Xiaoqiang Guo;Yinhong Luo;Zhibin Yaol;Lili Ding;Chenhui Wang;Rongmei Chen;Baoping He;Wen Zhao;Fengqi Zhang;Wuying Ma;Pengfei Zhai;Zujun Wang;Tianqi Liu;Hongxia Guo;Jiande Liu;Hailiang Yang;Peipei Hu;Peitian Cong;Zongzhen Li(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi＇an 710024, China;Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;Xidian University,school ofmicroelectronics Xi ＇an 710126, China;China Institute of Atomic Energy, Beijing 102413, China;Beijing Microelectronics Technology Institute, Beijing 100076, China;Department of Engineering Physics, Tsinghua University, Beijing 100084, China)

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,西安710024 [2]中国科学院近代物理研究所,兰州730000 [3]西安电子科技大学微电子学院,西安710126 [4]中国原子能研究院抗辐照应用技术创新中心,北京102413 [5]北京微电子技术研究所,北京100076 [6]清华大学工程物理系,北京100084

出　　处：《科学通报》2018年第13期1211-1222,共12页Chinese Science Bulletin

基　　金：国家自然科学基金(11690040;11690043)资助

摘　　要：电子器件空间辐射效应是影响航天器在轨长期可靠运行的重要因素之一,一直是国际上抗辐射加固技术领域研究的热点和难点.高可靠、高集成度、高性能、低功耗、低成本是未来新一代先进电子系统发展的必然要求,采用更高性能的抗辐射加固纳米器件是必然的趋势.本文在深入调研国内外研究现状的基础上,分析了纳米器件辐射效应面临的新问题.纳米工艺存在着很多不同于大尺寸工艺的特点,沟道长度缩小到十几个纳米,栅氧化层等效厚度小于1 nm.在工艺上引入了纵向逆掺杂阱或横向晕环掺杂技术,以降低栅极诱导漏极漏电效应;在材料上引入了多元半导体材料、应变硅、锗硅、高k栅介质、金属栅极等,以降低器件功耗;在结构上引入了三维Fin FET结构,以增强栅的控制能力.这种趋于物理极限的工艺特点、新材料和新结构的采用产生了许多新的辐射效应现象和机制,模拟试验技术更加复杂,给抗辐射加固技术研究带来了新的挑战.本文综述了纳米器件辐射效应的研究现状和趋势,重点针对28 nm及以下特征工艺纳米器件辐射效应研究及模拟试验的需求,提出了需要研究的科学问题和关键技术,希望能为纳米器件抗辐射加固与空间应用提供参考.Radiation damage in electronic devices is one of the key factors determining the survival probability of on-orbit spacecraft. Thus, it has remained an important topic in the field of radiation-hardening technology. High reliability, high integration, high performance, low power consumption, and low cost are the important requirements for the development of next-generation electronic systems. For space electronic systems, the use of radiation-hardened high-performance nano-devices will continue to be an important trend. Based on thorough reviewing of the research status at home and abroad, this paper analyzes new problems faced by nano-devices due to radiation. Nano-device technology is different from that for macroscopic devices. For example, the channel length in nano-devices is reduced to ten nanometers, and the equivalent thickness of their gate oxide is less than one nanometer. In order to reduce the gate-induced drain leakage effect, either vertical inverse doping or transverse halo ring doping is applied to the process. To reduce power consumption, multiple semiconductor materials, such as strained silicon, Ge Si, high k gate dielectric, metal gate, etc., have been introduced. To enhance control over the gate, the structure incorporates 3 D Fin FETs. This process approaches the physical limit, and the adoption of new materials and structures have created new radiation effects and mechanisms. Thus, the experimental techniques become more complex, which brings new challenges to research on radiation-hardening technology. This paper analyzes the present status of domestic and foreign research into radiation effects in nano-devices. Key scientific issues and technologies will be presented, which are needed to study radiation effects and simulation experiments of nano-devices with a feature size of less than 28 nm. Research on photon and heavy ion radiation mechanisms, as well as experimental techniques in nano-devices, should continue receiving focus. In addition, radiation damage mechanisms in nanometer device

关 键 词：纳米器件 空间辐射效应 抗辐射加固 模拟试验 

分 类 号：V443[航空宇航科学与技术—飞行器设计] V520.6