双热源合成碳化硅过程的三维数值模拟及窑炉结构优化设计  

Simulation and Design Optimization of Si C Synthesis Furnace with Double-Heat Sources

作　　者：杨小玉[1] 张晴[2] Yang Xiaoyu;Zhang Qing(Shaanxi Railway Institute, Weinan 714000, China;School of Material Science and Engineering, Xi＇ an University of Science and Technology,Xi＇ an 710054, China)

机构地区：[1]陕西铁路工程职业技术学院,渭南714000 [2]西安科技大学材料科学与工程学院,西安710054

出　　处：《真空科学与技术学报》2018年第5期413-418,共6页Chinese Journal of Vacuum Science and Technology

基　　金：陕西省科技攻关项目(2013GY2-03);陕西铁路工程职业技术学院科研基金项目(KY2016-34)

摘　　要：采用CFD软件,选取热电耦合模型、组份传输反应模型与辐射模型。对碳热还原合成碳化硅过程中双热源合成炉内能量及物质传递过程进行模拟研究。将模拟结果与工业试验数据进行对比验证,从而验证了模拟的可靠性,揭示了碳化硅合成过程中的传热传质机理。根据分析结果对传统的双热源碳化硅合成炉进行结构优化设计,对于延长合成炉的使用寿命、提升产品质量、改善工况具有一定的指导意义。The flow fields and heat/material transports, in the industrial furnace with double heat sources and for synthesis of silicon carbide by earbothermal reduction, were mathematically modeled, theoretically analyzed, nu- merically simulated in finite element method with ANSYS FLUENT software and experimentally evaluated with the lab-built furnace for the structural design optimization. The impact of the synthesis conditions, including but not limited to the furnace geometry, heat source position, heating time and gas permeability, on the temperature, pressure and gas velocity spatial profiles, and latent hazard of SiC production, was investigated. The simulated and experimental results were found to be in good agreement. The furnace modified with the simulated results outperforms the conventional one because of longer service lifetime, more environmental friendliness, greater safety, and most important, higher SiC quality.

关 键 词：双热源 碳化硅 数值模拟 优化设计 

分 类 号：TQ173[化学工程—搪瓷工业]