高迁移率IWO薄膜特性及其在薄膜硅/晶体硅异质结太阳电池中的应用研究  

STUDY OF HIGH MOBILITY IWO THIN FILMS AND ITS APPLICATION TO SHJ SOLAR CELLS

作　　者：沈磊磊 孟凡英[1,2] 石建华 刘正新[1,2] Shen Leilei;Meng Fanying;Shi Jianhua;Liu Zhengxin(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 201800, China;University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区：[1]中国科学院上海微系统与信息技术研究所新能源技术中心,上海201800 [2]中国科学院大学,北京100049

出　　处：《太阳能学报》2018年第5期1329-1334,共6页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2011AA050501);中国科学院知识创新工程重要方向性项目(KGCX2-Y-YW-399+11);上海张江国家自主创新示范区专项发展基金(ZJ2015-ZD-001)

摘　　要：采用反应等离子沉积（RPD）技术在玻璃衬底上制备掺W的In2O3（IWO）薄膜,实验发现氧偏压对薄膜特性影响较大。研究氧偏压对IWO薄膜光电特性的影响,低温条件下制备的薄膜结晶性较好,IWO迁移率达到60.0cm2/（V·s）。经过退火处理后,IWO的迁移率达到120.0 cm2/（V·s）以上。基于X射线衍射（XRD）和变温霍尔效应测试分析,高迁移率主要归因于良好的结晶性以及较低的晶界势垒。最后将优化的IWO薄膜应用到薄膜硅/晶体硅异质结（SHJ）太阳电池中,高迁移率有助于提高电池的短路电流和填充因子,获得高达22.3%的光电转换效率。W-doped In2O3（IWO）thin films are deposited on glass by the reactive plasma deposition（RPD）process.The influence of oxygen partial pressure on the structure,electrical and optical properties of IWO thin films isinvestigated. The mobility of the as-deposited films fabricated at low temperature can reach 60.0 cm2/（V·s）. The mobilitycan even get higher than 120.0 cm2/（V · s）after annealing,Based on X-Ray Diffraction（XRD）and temperaturedependent Hall effect measurements,we found that the high mobility of IWO films is due to the good crystalline and lowgrain-boundary barrier. Then the optimized IWO films are applied into silicon heterojunction solar cells. As the IWOfilms with high mobility can improve the short-circuit current and fill factor of solar cells,the highest conversionefficiency of 22.3% is obtained by optimization.

关 键 词：透明导电薄膜 IWO 迁移率 异质结太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]