纳米材料及HfO2基存储器件的原位电子显微学研究  

In situ transmission electron microscopy studies on nanomaterials and HfO_2-based storage nanodevices

作　　者：李超[1,2] 姚湲 杨阳[1] 沈希[1] 高滨[3] 霍宗亮 康晋锋[3] 刘明 禹日成[1,2] Li Chao;Yao Yuan;Yang Yang;Kang Jin-Feng;Shen Xi;Gao Bin;Huo Zong-Liang;Liu Ming;Yu Ri-Cheng(Laboratory of Advanced Materials and Electron Microscopy, Beijing National Laboratory of Condensed Matter Physics 3） 4） Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Key Laboratory of Microelectronics Device and Integrated 2~chnology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China)

机构地区：[1]中国科学院物理研究所北京凝聚态物理国家研究中心先进材料与结构分析实验室,北京100190 [2]中国科学院大学物理科学学院,北京100049 [3]北京大学信息科学技术学院,北京100871 [4]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《物理学报》2018年第12期119-133,共15页Acta Physica Sinica

摘　　要：总结了我们将原位技术和透射电子显微学分析方法相结合,针对纳米材料和器件的结构、形貌、成分以及电势分布等物理性质的动态行为所开展的综合物性表征和分析工作.主要成果有:揭示了C_(60)纳米晶须在焦耳热作用下的结构相变路径;观察到了电荷俘获存储器中的电荷存储位置以及栅极电压诱导的氧空位缺陷;研究了阻变存储器中氧空位通道的形成过程以及导电通道的开关机理.这些成果不但有助于深入理解纳米材料和器件相关功能的物理机理,改善其工作性能,更展示了透射电子显微学在微电子领域强大的研究能力.Advanced transmission electron microscopy combined with in situ techniques provides powerful ability to charac- terize the dynamic behaviors of phase transitions, composition changes and potential variations in the nanomaterials and devices under external electric field. In this paper, we review some important progress, in this field, of the expla- nation of structural transition path caused by the Joule heating in C6o nanowhikers, the clarification of electron storage position in charge trapping memory and the direct evidences of the oxygen vacancy channel and the conductive filament formation in resistive random access memory. These studies could improve an understanding of the basic mechanism of nanomaterial and device performance, and also demonstrate the diversity of the functions of transmission electron microscopy in microelectronic field.

关 键 词：透射电子显微学 原位 纳米材料 微电子器件 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN16[电子电信—物理电子学]